Large magnetoresistance in magnetic tunnel junctions using Co-Mn-Al full heusler alloy

Hitoshi Kubota, Jun Nakata, Mikihiko Oogane, Yasuo Ando, Akimasa Sakuma, Terunobu Miyazaki

Research output: Contribution to journalArticlepeer-review

75 Citations (Scopus)

Abstract

Magnetic tunnel junctions with a stacking structure of Cr/Co-Mn-Al/Al-O/Co- Fe/Ir-Mn were fabricated using a UHV magnetron-sputtering machine. Co-Mn-Al films showed B2 structure, which involves partial disorder between Mn and Al sites. Tunnel magnetoresistance ratios at room temperature were 27% and 40% before and after annealing at 250°C, respectively. Those values are much higher than the ones obtained in previous experiments using half Heusler alloys.

Original languageEnglish
Pages (from-to)L984-L986
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number7 B
DOIs
Publication statusPublished - 2004 Jul 15

Keywords

  • Heusler alloy
  • Magnetic random access memory
  • Spin polarization
  • Tunnel magnetoresistance

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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