Large magnetoresistance (>600%) of a GaAs:MnAs granular thin film at room temperature

M. Yokoyama, T. Ogawa, A. M. Nazmul, M. Tanaka

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31 Citations (Scopus)

Abstract

A large positive magnetoresistance (MR) at room temperature was observed in a GaAs:MnAs granular thin film, in which MnAs nanoclusters were embedded in a GaAs matrix. Current-voltage characteristics and a MR effect of the GaAs:MnAs thin film were measured by a two-point-probe method. The MR ratio of the GaAs:MnAs granular thin film reached more than 600%, when a bias voltage of 110 V was applied to the film.

Original languageEnglish
Article number08D502
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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