Large magnetoelectric coupling in magnetically short-range ordered Bi 5 Ti3 FeO15 film

Hongyang Zhao, Hideo Kimura, Zhenxiang Cheng, Minoru Osada, Jianli Wang, Xiaolin Wang, Shixue Dou, Yan Liu, Jianding Yu, Takao Matsumoto, Tetsuya Tohei, Naoya Shibata, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    117 Citations (Scopus)

    Abstract

    Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. However, single-phase materials with such cross-coupling properties at room temperature exist rarely in nature; new design of nano-engineered thin films with a strong magneto-electric coupling is a fundamental challenge. Here we demonstrate a robust room-temperature magneto-electric coupling in a bismuth-layer-structured ferroelectric Bi 5 Ti 3 FeO 15 with high ferroelectric Curie temperature of ∼1000K. Bi5 Ti3 FeO15 thin films grown by pulsed laser deposition are single-phase layered perovskit with nearly (00l)-orientation. Room-temperature multiferroic behavior is demonstrated by a large modulation in magneto-polarization and magneto-dielectric responses. Local structural characterizations by transmission electron microscopy and Mössbauer spectroscopy reveal the existence of Fe-rich nanodomains, which cause a short-range magnetic ordering at ∼620K. In Bi5 Ti3 FeO15 with a stable ferroelectric order, the spin canting of magnetic-ion-based nanodomains via the Dzyaloshinskii-Moriya interaction might yield a robust magneto-electric coupling of ∼400mV/Oe·cm even at room temperature.

    Original languageEnglish
    Article number5255
    JournalScientific reports
    Volume4
    DOIs
    Publication statusPublished - 2014 Jun 11

    ASJC Scopus subject areas

    • General

    Fingerprint Dive into the research topics of 'Large magnetoelectric coupling in magnetically short-range ordered Bi <sub>5</sub> Ti<sub>3</sub> FeO<sub>15</sub> film'. Together they form a unique fingerprint.

    Cite this