Large exchange bias and high blocking temperature of MgO-barrier-MTJs with L12-ordered Mn3Ir

Koujiro Komagaki, Kouji Yamada, Kenji Noma, Hitoshi Kanai, Kazuo Kobayashi, Yuji Uehara, Masakiyo Tsunoda, Migaku Takahashi

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We examined the magnetic properties of CoFeB/MgO/CoFeB based magnetic tunnel junctions (MTJs) with L12 (ordered)-Mn3 Ir or γ (disordered)-Mn75Ir2B as an antiferromagnetic (AFM) layer. Both of them showed tunnel magnetoresistance (TMR) ratio of about 160 % after 350 °C annealing. The exchange bias field (Hex) of the MTJs with L12 -Mn3 Ir is significantly larger than that with γ -MnIr. The blocking temperature (TB) of the MTJ film with L12 -Mn3 Ir is about 50°C higher than that with γ-MnIr. These results prove that L12-Mn3Ir is a great candidate as AFM in MgO-barrier-MTJs and makes them improve in exchange bias properties.

Original languageEnglish
Pages (from-to)3535-3537
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number8
Publication statusPublished - 2007 Aug 1


  • Blocking temperature
  • Exchange bias
  • L1(ordered)-Mn Ir
  • MgO barrier
  • Tunnel junction
  • Tunnel magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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