TY - JOUR
T1 - Large enhancement of the thermoelectric Seebeck coefficient for amorphous oxide semiconductor superlattices with extremely thin conductive layers
AU - Ohta, Hiromichi
AU - Huang, Rong
AU - Ikuhara, Yuichi
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Herein we demonstrate that amorphous oxide semiconductor (AOS) superlattices composed of a-In-Zn-O (well) and a-In-Ga-Zn-O (barrier) layers, fabricated on SiO2 glass substrate by pulsed laser deposition at room temperature, exhibited an enhanced Seebeck coefficient |S |. The |S
AB - Herein we demonstrate that amorphous oxide semiconductor (AOS) superlattices composed of a-In-Zn-O (well) and a-In-Ga-Zn-O (barrier) layers, fabricated on SiO2 glass substrate by pulsed laser deposition at room temperature, exhibited an enhanced Seebeck coefficient |S |. The |S
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U2 - 10.1002/pssr.200802017
DO - 10.1002/pssr.200802017
M3 - Article
AN - SCOPUS:70450187235
VL - 2
SP - 105
EP - 107
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 3
ER -