Large diode sensitivity of CoFeB/MgO/CoFeB magnetic tunnel junctions

Shota Ishibashi, Takeshi Seki, Takayuki Nozaki, Hitoshi Kubota, Satoshi Yakata, Akio Fukushima, Shinji Yuasa, Hiroki Maehara, Koji Tsunekawa, David D. Djayaprawira, Yoshishige Suzuki

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)

Abstract

We report on rf current-induced excitation of the ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions under a perpendicular magnetic field. By choosing an appropriate external field and using an Fe-rich CoFeB free layer, the effective precession of the free layer could be excited. In a measurement of homodyne detection, a large dc output voltage of 180 μV was obtained when an rf signal power of -25 dBm was applied. The sensitivity of this junction, as an rf rectifier, reaches about 170mV/mW (280mV/mW after impedance matching correction), which is the same order compared with that of a Schottky diode operated at room temperature.

Original languageEnglish
Article number073001
JournalApplied Physics Express
Volume3
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Large diode sensitivity of CoFeB/MgO/CoFeB magnetic tunnel junctions'. Together they form a unique fingerprint.

Cite this