Large difference of doping behavior of tetracyanoquinodimethane (TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on field effect transistor with channel of atomic layer MoS2

Hiroki Waizumi, Muhammad Shamim Al Mamun, Tsuyoshi Takaoka, Md Iftekharul Alam, Yudai Tanaka, Atsushi Ando, Zhipeng Wang, Ryuichi Arafune, Tadahiro Komeda

Research output: Contribution to journalArticlepeer-review

Abstract

We examined the mechanism of the large difference of the doping effect of two molecules of tetracyanoquinodimethane(TCNQ) and 2,3,5,6-Tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4-TCNQ) on the field effect transistor (FET) property, which is composed of the atomically thin MoS2 channel. The electron-acceptor behaviors of the two molecules are detected by examining the threshold voltage shift (ΔVth) of the drain current vs gate voltage curve plot. It shows only a mild shift of ∼4 V for the TCNQ but it shows a large value of ∼33 V for the F4-TCNQ molecule. The similar rapid change with small amount of F4-TCNQ deposition was detected as the Fermi level shift in the ultra violet photoemission spectroscopy (UPS). The DFT calculation shows the flat lying configuration for both molecules after the structural optimization, and the difference of the charge transfer to the substrate is not large enough to explain the difference of theΔVth. Instead, we want to propose a model in which the bonding of the F atom of the F4-TCNQ molecule at the S-defect contribute to the initial rapid variation of theΔVth.

Original languageEnglish
Article number151252
JournalApplied Surface Science
Volume571
DOIs
Publication statusPublished - 2022 Jan 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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