Large As sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography

Kouichi Hayashi, Naotaka Uchitomi, Keitaro Yamagami, Akiko Suzuki, Hayato Yoshizawa, Joel T. Asubar, Naohisa Happo, Shinya Hosokawa

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24 Citations (Scopus)

Abstract

The structure of a ZnSnAs2 thin film epitaxially grown on an InP substrate was evaluated using x-ray fluorescence holography. The reconstructed three-dimensional atomic images clearly show that the crystal structure of the ZnSnAs2 thin film is mainly of the sphalerite type, in contrast to the bulk form. A large disordering of the As layers is observed, whereas the positions of the Zn/Sn atoms are relatively stable. The analysis of the data indicates that the As layers serve as a buffer and relax the strain caused by the random occupation of Zn and Sn atoms. These results provide further understanding and a means of controlling the growth of Mn-doped ZnSnAs2, a high- Tc diluted magnetic semiconductor.

Original languageEnglish
Article number125703
JournalJournal of Applied Physics
Volume119
Issue number12
DOIs
Publication statusPublished - 2016 Mar 28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Hayashi, K., Uchitomi, N., Yamagami, K., Suzuki, A., Yoshizawa, H., Asubar, J. T., Happo, N., & Hosokawa, S. (2016). Large As sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography. Journal of Applied Physics, 119(12), [125703]. https://doi.org/10.1063/1.4945004