Lanthanum oxide for gate dielectric insulator

K. Kakushima; K. Tsutsui; T. Hattori; H. Iwai

doi:10.1109/EDSSC.2005.1635231

Lanthanum oxide for gate dielectric insulator

K. Kakushima, K. Tsutsui, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A feasibility study of La₂O₃, one of the rare earth oxides, for replacing SiO₂ gate oxide for CMOS integrated circuits has been reported. It is found that La₂O₃ after a proper heat treatment has fairly good electrical properties for gate insulator applications in MOSFETs, namely high barrier height for the conduction band electrons and valence band holes as well as its high dielectric constant The conduction mechanism of La₂O₃ gate insulator has been modeled, and has been shown to be mainly by space charge limited current (SCLC). Long channel MOSFETs with La₂O₃ gate insulator has been fabricated, where the best effective mobility is 319 cm²/Vs with 2.3 nm of EOT. Interfacial layer (IL) growth suppression due to heat treatment is also reported.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	161-166
Number of pages	6
ISBN (Print)	0780393392, 9780780393394
DOIs	https://doi.org/10.1109/EDSSC.2005.1635231
Publication status	Published - 2005
Externally published	Yes
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 2005 Dec 19 → 2005 Dec 21

Publication series

Name	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country	Hong Kong
City	Howloon
Period	05/12/19 → 05/12/21

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2005.1635231

Fingerprint Dive into the research topics of 'Lanthanum oxide for gate dielectric insulator'. Together they form a unique fingerprint.

Cite this

Kakushima, K., Tsutsui, K., Hattori, T., & Iwai, H. (2005). Lanthanum oxide for gate dielectric insulator. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 161-166). [1635231] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635231

Lanthanum oxide for gate dielectric insulator. / Kakushima, K.; Tsutsui, K.; Hattori, T.; Iwai, H.

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 161-166 1635231 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kakushima, K, Tsutsui, K, Hattori, T & Iwai, H 2005, Lanthanum oxide for gate dielectric insulator. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635231, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., pp. 161-166, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 05/12/19. https://doi.org/10.1109/EDSSC.2005.1635231

@inproceedings{8004a977e47d411c9a1920bf592d3b84,

title = "Lanthanum oxide for gate dielectric insulator",

abstract = "A feasibility study of La2O3, one of the rare earth oxides, for replacing SiO2 gate oxide for CMOS integrated circuits has been reported. It is found that La2O3 after a proper heat treatment has fairly good electrical properties for gate insulator applications in MOSFETs, namely high barrier height for the conduction band electrons and valence band holes as well as its high dielectric constant The conduction mechanism of La2O3 gate insulator has been modeled, and has been shown to be mainly by space charge limited current (SCLC). Long channel MOSFETs with La2O3 gate insulator has been fabricated, where the best effective mobility is 319 cm2/Vs with 2.3 nm of EOT. Interfacial layer (IL) growth suppression due to heat treatment is also reported.",

author = "K. Kakushima and K. Tsutsui and T. Hattori and H. Iwai",

year = "2005",

doi = "10.1109/EDSSC.2005.1635231",

language = "English",

isbn = "0780393392",

series = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "161--166",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 19-12-2005 Through 21-12-2005",

}

TY - GEN

T1 - Lanthanum oxide for gate dielectric insulator

AU - Kakushima, K.

AU - Tsutsui, K.

AU - Hattori, T.

AU - Iwai, H.

PY - 2005

Y1 - 2005

N2 - A feasibility study of La2O3, one of the rare earth oxides, for replacing SiO2 gate oxide for CMOS integrated circuits has been reported. It is found that La2O3 after a proper heat treatment has fairly good electrical properties for gate insulator applications in MOSFETs, namely high barrier height for the conduction band electrons and valence band holes as well as its high dielectric constant The conduction mechanism of La2O3 gate insulator has been modeled, and has been shown to be mainly by space charge limited current (SCLC). Long channel MOSFETs with La2O3 gate insulator has been fabricated, where the best effective mobility is 319 cm2/Vs with 2.3 nm of EOT. Interfacial layer (IL) growth suppression due to heat treatment is also reported.

AB - A feasibility study of La2O3, one of the rare earth oxides, for replacing SiO2 gate oxide for CMOS integrated circuits has been reported. It is found that La2O3 after a proper heat treatment has fairly good electrical properties for gate insulator applications in MOSFETs, namely high barrier height for the conduction band electrons and valence band holes as well as its high dielectric constant The conduction mechanism of La2O3 gate insulator has been modeled, and has been shown to be mainly by space charge limited current (SCLC). Long channel MOSFETs with La2O3 gate insulator has been fabricated, where the best effective mobility is 319 cm2/Vs with 2.3 nm of EOT. Interfacial layer (IL) growth suppression due to heat treatment is also reported.

UR - http://www.scopus.com/inward/record.url?scp=43549089926&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43549089926&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2005.1635231

DO - 10.1109/EDSSC.2005.1635231

M3 - Conference contribution

AN - SCOPUS:43549089926

SN - 0780393392

SN - 9780780393394

T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

SP - 161

EP - 166

BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 19 December 2005 through 21 December 2005

ER -

Lanthanum oxide for gate dielectric insulator

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this