TY - GEN
T1 - Lanthanum oxide for gate dielectric insulator
AU - Kakushima, K.
AU - Tsutsui, K.
AU - Hattori, T.
AU - Iwai, H.
PY - 2005
Y1 - 2005
N2 - A feasibility study of La2O3, one of the rare earth oxides, for replacing SiO2 gate oxide for CMOS integrated circuits has been reported. It is found that La2O3 after a proper heat treatment has fairly good electrical properties for gate insulator applications in MOSFETs, namely high barrier height for the conduction band electrons and valence band holes as well as its high dielectric constant The conduction mechanism of La2O3 gate insulator has been modeled, and has been shown to be mainly by space charge limited current (SCLC). Long channel MOSFETs with La2O3 gate insulator has been fabricated, where the best effective mobility is 319 cm2/Vs with 2.3 nm of EOT. Interfacial layer (IL) growth suppression due to heat treatment is also reported.
AB - A feasibility study of La2O3, one of the rare earth oxides, for replacing SiO2 gate oxide for CMOS integrated circuits has been reported. It is found that La2O3 after a proper heat treatment has fairly good electrical properties for gate insulator applications in MOSFETs, namely high barrier height for the conduction band electrons and valence band holes as well as its high dielectric constant The conduction mechanism of La2O3 gate insulator has been modeled, and has been shown to be mainly by space charge limited current (SCLC). Long channel MOSFETs with La2O3 gate insulator has been fabricated, where the best effective mobility is 319 cm2/Vs with 2.3 nm of EOT. Interfacial layer (IL) growth suppression due to heat treatment is also reported.
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U2 - 10.1109/EDSSC.2005.1635231
DO - 10.1109/EDSSC.2005.1635231
M3 - Conference contribution
AN - SCOPUS:43549089926
SN - 0780393392
SN - 9780780393394
T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
SP - 161
EP - 166
BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Y2 - 19 December 2005 through 21 December 2005
ER -