The threshold current density Jc0, effective anisotropy field Heff, and the spin transfer torque (STT) efficiency of magnetic tunnel junctions with perpendicular anisotropy (p-MTJs) with the free layer diameter d from 10 to 30nm was evaluated when etching degraded the saturation magnetization Ms and/or anisotropic energy Ku of the ferromagnetic layers with thickness of 1 to 3 nm around the pillar, using Landau-Lifshitz- Gilbert (LLG) micro-magnetic simulation. The STT efficiency for MTJs with only Ms reduction increased with a decrease in d, which reproduces the experimental trend. Jc0 and Heff for MTJs with only Ku reduction dramatically decreased even when the thickness of the damaged region is only 1 nm. The thickness of the damaged region had a large influence on Jc0 and Heff for MTJs with either Ms or Ku reduction.
ASJC Scopus subject areas
- Physics and Astronomy(all)