Lamp-heated rapid vapor-phase doping technology for 100-GHz Si bipolar transistors

Yukihiro Kiyota, Eiji Ohue, Takahiro Onai, Katsuyoshi Washio, Masamichi Tanabe, Taroh Inada

Research output: Contribution to conferencePaperpeer-review

5 Citations (Scopus)

Abstract

High-speed Si bipolar transistor technology that uses lamp-heated Rapid Vapor-phase Doping (RVD) for shallow base formation is demonstrated. By applying RVD to a self-aligned metal/IDP (SMI) base electrode structure, excellent characteristics, 82-GHz fT and 92-GHz fmax, were obtained simultaneously. Devices with longer emitters attained 100 GHz fT and fmax.

Original languageEnglish
Pages173-176
Number of pages4
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA
Duration: 1996 Sep 291996 Oct 1

Other

OtherProceedings of the 1996 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
CityMinneapolis, MN, USA
Period96/9/2996/10/1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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