Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors

Yoshihiro Koga; Shunsuke Yamada; Shuji Tanaka; Kazunari Kurita

doi:10.1109/LTB-3D53950.2021.9598418

Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors

Yoshihiro Koga, Shunsuke Yamada, Shuji Tanaka, Kazunari Kurita

ENG - Robotics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We proposed the fabrication of the laminated wafer with the conductive diamond layer as an alternative SOI wafer for micro-electro mechanical systems (MEMS) sensors by chemical vapor deposition (CVD) and surface-activated bonding (SAB), in order to prevent the charge-up of devices on a BOX layer during plasma treatments. We demonstrated that the use of this laminated wafer could be deposited the boron-doped diamond layer and be bonded a silicon wafer (layer) at room temperature without a thermal stress. Therefore, we believe that this laminated wafer can contribute to the improvement of MEMS sensors as an alternative SOI wafer.

Original language	English
Title of host publication	2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	33
Number of pages	1
ISBN (Electronic)	9781665405676
DOIs	https://doi.org/10.1109/LTB-3D53950.2021.9598418
Publication status	Published - 2021 Oct 5
Event	7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 - Virtual, Online, Japan Duration: 2021 Oct 5 → 2021 Oct 11

Publication series

Name	2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

Conference

Conference	7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Country/Territory	Japan
City	Virtual, Online
Period	21/10/5 → 21/10/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/LTB-3D53950.2021.9598418

Cite this

Koga, Y., Yamada, S., Tanaka, S., & Kurita, K. (2021). Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors. In 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 (pp. 33). (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LTB-3D53950.2021.9598418

Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors. / Koga, Yoshihiro; Yamada, Shunsuke ; Tanaka, Shuji et al.

2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 33 (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koga, Y, Yamada, S , Tanaka, S & Kurita, K 2021, Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors. in 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021, Institute of Electrical and Electronics Engineers Inc., pp. 33, 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021, Virtual, Online, Japan, 21/10/5. https://doi.org/10.1109/LTB-3D53950.2021.9598418

Koga Y, Yamada S , Tanaka S, Kurita K. Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors. In 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 33. (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021). doi: 10.1109/LTB-3D53950.2021.9598418

Koga, Yoshihiro ; Yamada, Shunsuke ; Tanaka, Shuji et al. / Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors. 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 33 (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021).

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title = "Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors",

abstract = "We proposed the fabrication of the laminated wafer with the conductive diamond layer as an alternative SOI wafer for micro-electro mechanical systems (MEMS) sensors by chemical vapor deposition (CVD) and surface-activated bonding (SAB), in order to prevent the charge-up of devices on a BOX layer during plasma treatments. We demonstrated that the use of this laminated wafer could be deposited the boron-doped diamond layer and be bonded a silicon wafer (layer) at room temperature without a thermal stress. Therefore, we believe that this laminated wafer can contribute to the improvement of MEMS sensors as an alternative SOI wafer.",

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N2 - We proposed the fabrication of the laminated wafer with the conductive diamond layer as an alternative SOI wafer for micro-electro mechanical systems (MEMS) sensors by chemical vapor deposition (CVD) and surface-activated bonding (SAB), in order to prevent the charge-up of devices on a BOX layer during plasma treatments. We demonstrated that the use of this laminated wafer could be deposited the boron-doped diamond layer and be bonded a silicon wafer (layer) at room temperature without a thermal stress. Therefore, we believe that this laminated wafer can contribute to the improvement of MEMS sensors as an alternative SOI wafer.

AB - We proposed the fabrication of the laminated wafer with the conductive diamond layer as an alternative SOI wafer for micro-electro mechanical systems (MEMS) sensors by chemical vapor deposition (CVD) and surface-activated bonding (SAB), in order to prevent the charge-up of devices on a BOX layer during plasma treatments. We demonstrated that the use of this laminated wafer could be deposited the boron-doped diamond layer and be bonded a silicon wafer (layer) at room temperature without a thermal stress. Therefore, we believe that this laminated wafer can contribute to the improvement of MEMS sensors as an alternative SOI wafer.

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Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors

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