La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

D. H. Zadeh, H. Oomine, Y. Suzuki, K. Kakushima, P. Ahmet, H. Nohira, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Effect of W and TiN/W gate metal on the interface quality of La 2O3/InGaAs metal-oxide-semiconductor (MOS) interface is investigated. Hard X-ray photoelectron spectroscopy revealed that gate metal greatly affects the oxidation states at La2O3/InGaAs interface after post-metallization annealing (PMA). Results demonstrate that TiN/W gate metal can effectively control the reaction at La2O 3/InGaAs interface and also suppress the formation of As, Ga, and In oxides. As a result, superior capacitance-voltage (C-V) characteristics with low interface state density (Dit) of 4.6 × 1011 cm -2/eV (∼0.1 eV from midgap) and leakage current below 10 -5 A/cm2 was obtained for TiN/W/La2O 3 (10 nm)/InGaAs MOS capacitors. The MOS structure integrity was preserved for annealing temperature up to 620 °C.

Original languageEnglish
Pages (from-to)29-33
Number of pages5
JournalSolid-State Electronics
Volume82
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • Capacitor
  • High-k/InGaAs
  • Interface reaction
  • Interface state density
  • LaO
  • Metal gate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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