La-based oxides for high-k gate dielectric application

Parhat Ahmet, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Thermal stability of Rare earth oxides La2O3/Y 2O3 stack structure was studied. X-ray photoelectron spectroscopy (XPS) analysis revealed that Y2O3 layer suppresses the formation of SiO2 at interface. It was found that mobility degradation in La-based gate dielectric MOSFETs during high temperature annealing can be prevented by inserting a thin Y2O3 interfacial layer.

    Original languageEnglish
    Title of host publicationICSICT-2006
    Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
    PublisherIEEE Computer Society
    Pages408-411
    Number of pages4
    ISBN (Print)1424401615, 9781424401611
    DOIs
    Publication statusPublished - 2006 Jan 1
    EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
    Duration: 2006 Oct 232006 Oct 26

    Publication series

    NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

    Other

    OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
    CountryChina
    CityShanghai
    Period06/10/2306/10/26

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • Cite this

    Ahmet, P., Kakushima, K., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2006). La-based oxides for high-k gate dielectric application. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 408-411). [4098121] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306264