L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process

M. Ono; N. Suematsu; Y. Yamaguchi; K. Ueda; H. Komurasaki; S. Kubo; Y. Iyama; O. Ishida

doi:10.1109/SMIC.1998.750200

L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process

M. Ono, N. Suematsu, Y. Yamaguchi, K. Ueda, H. Komurasaki, S. Kubo, Y. Iyama, O. Ishida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, on-chip matching Si-MMIC low noise amplifier (LNA) was fabricated in a 0.35 μm SOI CMOS process. This LNA offers 8.7 dB gain, 4.2 dB NF,-2 dBm IIP3 at 2.1 GHz with 3 V, 3 mA DC power. The reduction of the dielectric loss of the spiral inductor is also discussed by referring to the extraction result of the equivalent circuit parameter.

Original language	English
Title of host publication	1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
Editors	Sammy Kayali
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	90-93
Number of pages	4
ISBN (Electronic)	0780352882, 9780780352889
DOIs	https://doi.org/10.1109/SMIC.1998.750200
Publication status	Published - 1998 Jan 1
Externally published	Yes
Event	1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States Duration: 1998 Sept 18 → 1998 Sept 18

Publication series

Name	1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
Volume	1998-September

Other

Other	1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
Country/Territory	United States
City	Ann Arbor
Period	98/9/18 → 98/9/18

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/SMIC.1998.750200

Cite this

Ono, M., Suematsu, N., Yamaguchi, Y., Ueda, K., Komurasaki, H., Kubo, S., Iyama, Y., & Ishida, O. (1998). L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process. In S. Kayali (Ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 (pp. 90-93). [750200] (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998; Vol. 1998-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.1998.750200

L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process. / Ono, M.; Suematsu, N.; Yamaguchi, Y. et al.

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. ed. / Sammy Kayali. Institute of Electrical and Electronics Engineers Inc., 1998. p. 90-93 750200 (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998; Vol. 1998-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ono, M, Suematsu, N, Yamaguchi, Y, Ueda, K, Komurasaki, H, Kubo, S, Iyama, Y & Ishida, O 1998, L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process. in S Kayali (ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998., 750200, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998, vol. 1998-September, Institute of Electrical and Electronics Engineers Inc., pp. 90-93, 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998, Ann Arbor, United States, 98/9/18. https://doi.org/10.1109/SMIC.1998.750200

Ono M, Suematsu N, Yamaguchi Y, Ueda K, Komurasaki H, Kubo S et al. L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process. In Kayali S, editor, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. Institute of Electrical and Electronics Engineers Inc. 1998. p. 90-93. 750200. (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998). doi: 10.1109/SMIC.1998.750200

Ono, M. ; Suematsu, N. ; Yamaguchi, Y. et al. / L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process. 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. editor / Sammy Kayali. Institute of Electrical and Electronics Engineers Inc., 1998. pp. 90-93 (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998).

@inproceedings{eefde99c737646b9bb5b1386d1881ffb,

title = "L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process",

abstract = "In this paper, on-chip matching Si-MMIC low noise amplifier (LNA) was fabricated in a 0.35 μm SOI CMOS process. This LNA offers 8.7 dB gain, 4.2 dB NF,-2 dBm IIP3 at 2.1 GHz with 3 V, 3 mA DC power. The reduction of the dielectric loss of the spiral inductor is also discussed by referring to the extraction result of the equivalent circuit parameter.",

author = "M. Ono and N. Suematsu and Y. Yamaguchi and K. Ueda and H. Komurasaki and S. Kubo and Y. Iyama and O. Ishida",

year = "1998",

month = jan,

day = "1",

doi = "10.1109/SMIC.1998.750200",

language = "English",

series = "1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "90--93",

editor = "Sammy Kayali",

booktitle = "1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998",

note = "1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 ; Conference date: 18-09-1998 Through 18-09-1998",

}

TY - GEN

T1 - L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process

AU - Ono, M.

AU - Suematsu, N.

AU - Yamaguchi, Y.

AU - Ueda, K.

AU - Komurasaki, H.

AU - Kubo, S.

AU - Iyama, Y.

AU - Ishida, O.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - In this paper, on-chip matching Si-MMIC low noise amplifier (LNA) was fabricated in a 0.35 μm SOI CMOS process. This LNA offers 8.7 dB gain, 4.2 dB NF,-2 dBm IIP3 at 2.1 GHz with 3 V, 3 mA DC power. The reduction of the dielectric loss of the spiral inductor is also discussed by referring to the extraction result of the equivalent circuit parameter.

AB - In this paper, on-chip matching Si-MMIC low noise amplifier (LNA) was fabricated in a 0.35 μm SOI CMOS process. This LNA offers 8.7 dB gain, 4.2 dB NF,-2 dBm IIP3 at 2.1 GHz with 3 V, 3 mA DC power. The reduction of the dielectric loss of the spiral inductor is also discussed by referring to the extraction result of the equivalent circuit parameter.

UR - http://www.scopus.com/inward/record.url?scp=85024718851&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85024718851&partnerID=8YFLogxK

U2 - 10.1109/SMIC.1998.750200

DO - 10.1109/SMIC.1998.750200

M3 - Conference contribution

AN - SCOPUS:85024718851

T3 - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998

SP - 90

EP - 93

BT - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998

A2 - Kayali, Sammy

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998

Y2 - 18 September 1998 through 18 September 1998

ER -

L-band on-chip matching Si-MMIC low noise amplifier fabricated in SOI CMOS process

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