L-band internally matched Si-MMIC low noise amplifier

Noriharu Suematsu, Masayoshi Ono, Shunji Kubo, Hisayasu Sato, Yoshitada Iyama, Osami Ishida

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

A Si-MMIC low noise amplifier (LNA), fabricated in conventional 0.8 um Bi-CMOS process, was developed. This LNA is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits. At 1.9 GHz, noise figure of 2.7 dB and gain of 10 dB were obtained at 2 V/2 mA d.c. supply.

Original languageEnglish
Pages (from-to)1225-1228
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA
Duration: 1996 Jun 171996 Jun 21

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'L-band internally matched Si-MMIC low noise amplifier'. Together they form a unique fingerprint.

Cite this