Abstract
A Si-MMIC low noise amplifier (LNA), fabricated in conventional 0.8 um Bi-CMOS process, was developed. This LNA is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits. At 1.9 GHz, noise figure of 2.7 dB and gain of 10 dB were obtained at 2 V/2 mA d.c. supply.
Original language | English |
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Pages (from-to) | 1225-1228 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 3 |
Publication status | Published - 1996 Jan 1 |
Externally published | Yes |
Event | Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA Duration: 1996 Jun 17 → 1996 Jun 21 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering