L-band internally matched Si-MMIC low noise amplifier

Noriharu Suematsu; Masayoshi Ono; Shunji Kubo; Hisayasu Sato; Yoshitada Iyama; Osami Ishida

L-band internally matched Si-MMIC low noise amplifier

Noriharu Suematsu, Masayoshi Ono, Shunji Kubo, Hisayasu Sato, Yoshitada Iyama, Osami Ishida

Research output: Contribution to journal › Conference article › peer-review

Abstract

A Si-MMIC low noise amplifier (LNA), fabricated in conventional 0.8 um Bi-CMOS process, was developed. This LNA is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits. At 1.9 GHz, noise figure of 2.7 dB and gain of 10 dB were obtained at 2 V/2 mA d.c. supply.

Original language	English
Pages (from-to)	1225-1228
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
Publication status	Published - 1996 Jan 1
Externally published	Yes
Event	Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA Duration: 1996 Jun 17 → 1996 Jun 21

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "L-band internally matched Si-MMIC low noise amplifier",

abstract = "A Si-MMIC low noise amplifier (LNA), fabricated in conventional 0.8 um Bi-CMOS process, was developed. This LNA is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits. At 1.9 GHz, noise figure of 2.7 dB and gain of 10 dB were obtained at 2 V/2 mA d.c. supply.",

author = "Noriharu Suematsu and Masayoshi Ono and Shunji Kubo and Hisayasu Sato and Yoshitada Iyama and Osami Ishida",

year = "1996",

month = jan,

day = "1",

language = "English",

volume = "3",

pages = "1225--1228",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) ; Conference date: 17-06-1996 Through 21-06-1996",

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TY - JOUR

T1 - L-band internally matched Si-MMIC low noise amplifier

AU - Suematsu, Noriharu

AU - Ono, Masayoshi

AU - Kubo, Shunji

AU - Sato, Hisayasu

AU - Iyama, Yoshitada

AU - Ishida, Osami

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A Si-MMIC low noise amplifier (LNA), fabricated in conventional 0.8 um Bi-CMOS process, was developed. This LNA is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits. At 1.9 GHz, noise figure of 2.7 dB and gain of 10 dB were obtained at 2 V/2 mA d.c. supply.

AB - A Si-MMIC low noise amplifier (LNA), fabricated in conventional 0.8 um Bi-CMOS process, was developed. This LNA is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits. At 1.9 GHz, noise figure of 2.7 dB and gain of 10 dB were obtained at 2 V/2 mA d.c. supply.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029707018&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029707018

VL - 3

SP - 1225

EP - 1228

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

T2 - Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3)

Y2 - 17 June 1996 through 21 June 1996

ER -

L-band internally matched Si-MMIC low noise amplifier

Abstract

ASJC Scopus subject areas

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