Abstract
A 1.9GHz-band front-end Si-MMIC was developed, which includes MOSFET T/R switch, two-stage BJT low noise amplifier (LNA), and down converter BJT mixer. This front-end IC is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits in standard 0.8μm BR-CMOS process. The T/R switch of the front-end has the measured insertion loss of 2.5dB and isolation of 25.5dB at 0/3V control voltage. The LNA has gain of 17.1dB and noise figure (NF) of 2.9dB at 2V, 4mA d.c. supply. The mixer has conversion gain of 5.9dB and NE of l5dB at 2V, 1.7mA d.c. supply. The measured performance of this frontend IC indicates the possibility of application for mobile communication handset terminals.
Original language | English |
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Pages | 37-40 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1996 Jan 1 |
Externally published | Yes |
Event | 1996 26th European Microwave Conference, EuMC 1996 - Prague, Czech Republic Duration: 1996 Sep 6 → 1996 Sep 13 |
Other
Other | 1996 26th European Microwave Conference, EuMC 1996 |
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Country/Territory | Czech Republic |
City | Prague |
Period | 96/9/6 → 96/9/13 |
ASJC Scopus subject areas
- Computer Networks and Communications
- Hardware and Architecture
- Electrical and Electronic Engineering