L-band internally matched front-end Si-MMIC

Noriharu Suematsu; Masayoshi Ono; Shunji Kubo; Hisayasu Sato; Yoshitada Iyama; Osami Ishida

doi:10.1109/EUMA.1996.337513

L-band internally matched front-end Si-MMIC

Noriharu Suematsu, Masayoshi Ono, Shunji Kubo, Hisayasu Sato, Yoshitada Iyama, Osami Ishida

Research output: Contribution to conference › Paper

Abstract

A 1.9GHz-band front-end Si-MMIC was developed, which includes MOSFET T/R switch, two-stage BJT low noise amplifier (LNA), and down converter BJT mixer. This front-end IC is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits in standard 0.8μm BR-CMOS process. The T/R switch of the front-end has the measured insertion loss of 2.5dB and isolation of 25.5dB at 0/3V control voltage. The LNA has gain of 17.1dB and noise figure (NF) of 2.9dB at 2V, 4mA d.c. supply. The mixer has conversion gain of 5.9dB and NE of l5dB at 2V, 1.7mA d.c. supply. The measured performance of this frontend IC indicates the possibility of application for mobile communication handset terminals.

Original language	English
Pages	37-40
Number of pages	4
DOIs	https://doi.org/10.1109/EUMA.1996.337513
Publication status	Published - 1996 Jan 1
Externally published	Yes
Event	1996 26th European Microwave Conference, EuMC 1996 - Prague, Czech Republic Duration: 1996 Sep 6 → 1996 Sep 13

Other

Other	1996 26th European Microwave Conference, EuMC 1996
Country	Czech Republic
City	Prague
Period	96/9/6 → 96/9/13

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EUMA.1996.337513

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Cite this

Suematsu, N., Ono, M., Kubo, S., Sato, H., Iyama, Y., & Ishida, O. (1996). L-band internally matched front-end Si-MMIC. 37-40. Paper presented at 1996 26th European Microwave Conference, EuMC 1996, Prague, Czech Republic. https://doi.org/10.1109/EUMA.1996.337513

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title = "L-band internally matched front-end Si-MMIC",

abstract = "A 1.9GHz-band front-end Si-MMIC was developed, which includes MOSFET T/R switch, two-stage BJT low noise amplifier (LNA), and down converter BJT mixer. This front-end IC is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits in standard 0.8μm BR-CMOS process. The T/R switch of the front-end has the measured insertion loss of 2.5dB and isolation of 25.5dB at 0/3V control voltage. The LNA has gain of 17.1dB and noise figure (NF) of 2.9dB at 2V, 4mA d.c. supply. The mixer has conversion gain of 5.9dB and NE of l5dB at 2V, 1.7mA d.c. supply. The measured performance of this frontend IC indicates the possibility of application for mobile communication handset terminals.",

author = "Noriharu Suematsu and Masayoshi Ono and Shunji Kubo and Hisayasu Sato and Yoshitada Iyama and Osami Ishida",

year = "1996",

month = jan,

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doi = "10.1109/EUMA.1996.337513",

language = "English",

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AU - Suematsu, Noriharu

AU - Ono, Masayoshi

AU - Kubo, Shunji

AU - Sato, Hisayasu

AU - Iyama, Yoshitada

AU - Ishida, Osami

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A 1.9GHz-band front-end Si-MMIC was developed, which includes MOSFET T/R switch, two-stage BJT low noise amplifier (LNA), and down converter BJT mixer. This front-end IC is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits in standard 0.8μm BR-CMOS process. The T/R switch of the front-end has the measured insertion loss of 2.5dB and isolation of 25.5dB at 0/3V control voltage. The LNA has gain of 17.1dB and noise figure (NF) of 2.9dB at 2V, 4mA d.c. supply. The mixer has conversion gain of 5.9dB and NE of l5dB at 2V, 1.7mA d.c. supply. The measured performance of this frontend IC indicates the possibility of application for mobile communication handset terminals.

AB - A 1.9GHz-band front-end Si-MMIC was developed, which includes MOSFET T/R switch, two-stage BJT low noise amplifier (LNA), and down converter BJT mixer. This front-end IC is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits in standard 0.8μm BR-CMOS process. The T/R switch of the front-end has the measured insertion loss of 2.5dB and isolation of 25.5dB at 0/3V control voltage. The LNA has gain of 17.1dB and noise figure (NF) of 2.9dB at 2V, 4mA d.c. supply. The mixer has conversion gain of 5.9dB and NE of l5dB at 2V, 1.7mA d.c. supply. The measured performance of this frontend IC indicates the possibility of application for mobile communication handset terminals.

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