L-band internally matched front-end Si-MMIC

Noriharu Suematsu, Masayoshi Ono, Shunji Kubo, Hisayasu Sato, Yoshitada Iyama, Osami Ishida

Research output: Contribution to conferencePaper

Abstract

A 1.9GHz-band front-end Si-MMIC was developed, which includes MOSFET T/R switch, two-stage BJT low noise amplifier (LNA), and down converter BJT mixer. This front-end IC is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits in standard 0.8μm BR-CMOS process. The T/R switch of the front-end has the measured insertion loss of 2.5dB and isolation of 25.5dB at 0/3V control voltage. The LNA has gain of 17.1dB and noise figure (NF) of 2.9dB at 2V, 4mA d.c. supply. The mixer has conversion gain of 5.9dB and NE of l5dB at 2V, 1.7mA d.c. supply. The measured performance of this frontend IC indicates the possibility of application for mobile communication handset terminals.

Original languageEnglish
Pages37-40
Number of pages4
DOIs
Publication statusPublished - 1996 Jan 1
Externally publishedYes
Event1996 26th European Microwave Conference, EuMC 1996 - Prague, Czech Republic
Duration: 1996 Sep 61996 Sep 13

Other

Other1996 26th European Microwave Conference, EuMC 1996
CountryCzech Republic
CityPrague
Period96/9/696/9/13

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Suematsu, N., Ono, M., Kubo, S., Sato, H., Iyama, Y., & Ishida, O. (1996). L-band internally matched front-end Si-MMIC. 37-40. Paper presented at 1996 26th European Microwave Conference, EuMC 1996, Prague, Czech Republic. https://doi.org/10.1109/EUMA.1996.337513