Kondo effect in CeXc (Xc = S, Se, Te) studied by electrical resistivity measurements under high pressure

Yuya Hayashi, Shun Takai, Takeshi Matsumura, Hiroshi Tanida, Masafumi Sera, Kazuyuki Matsubayashi, Yoshiya Uwatoko, Akira Ochiai

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Abstract

We have measured the electrical resistivity of cerium monochalcogenides, CeS, CeSe, and CeTe, under high pressures of up to 8 GPa. The pressure dependences of the antiferromagnetic ordering temperature N, crystal field splitting, and the ln T anomaly of the Kondo effect have been studied to cover the entire region from the magnetic ordering regime at low pressure to the Fermi liquid regime at high pressure. N initially increases with increasing pressure, and starts to decrease at high pressure as expected from Doniach's diagram. Simultaneously, the ln T behavior in the resistivity is enhanced, indicating the enhancement of the Kondo effect by pressure. It is also characteristic of CeXc that the crystal field splitting rapidly decreases at a common rate of -12.2K=GPa. This leads to the increase in the degeneracy of the f state and the further enhancement of the Kondo effect. It is shown that the pressure-dependent degeneracy of the f state is a key factor for understanding the pressure dependence of TN,, the Kondo effect, magnetoresistance, and the peak structure in the temperature dependence of resistivity.

Original languageEnglish
Article number034704
Journaljournal of the physical society of japan
Volume85
Issue number3
DOIs
Publication statusPublished - 2016

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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