Kink modification using body contact bias in InP based InAIAs/InGaAs HEMTs

T. Suemitsu, T. Enoki, Y. Ishii

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The mechanism of kink in InP based InAlAs/InGaAs HEMTs is studied using HEMTs with a body contact (BC) electrode consisting of a buried p layer and a /Hype contact. Kink modification was directly observed by varying BC bias, which shows kink is an anomalous suppression of drain current at lowdrain bias, not a parasitic current at high bias. Based on this result, the origin of kink is discussed.

Original languageEnglish
Pages (from-to)1143-1144
Number of pages2
JournalElectronics Letters
Volume32
Issue number12
DOIs
Publication statusPublished - 1996 Jun 6
Externally publishedYes

Keywords

  • Gallium indium arsenide
  • High electron mobility transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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