KINETICS OF THE GENERATION OF ATOMIC HYDROGEN AND ITS ADSORPTION ON Si(110).

Toshio Sakurai; M. J. Cardillo; H. D. Hagstrum

KINETICS OF THE GENERATION OF ATOMIC HYDROGEN AND ITS ADSORPTION ON Si(110).

Toshio Sakurai, M. J. Cardillo, H. D. Hagstrum

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

The rate of change of uv photoemission spectroscopy (UPS) spectral features accompanying formation of the monohydride phase on Si(110)5 multiplied by 1 is measured as a function of H//2 pressure and W filament temperature in a thermal activation source. It is shown that an equilibrium thermodynamic calculation can reproduce the observed rates only if the adsorbing species produced at the hot filaments is atomic H and not vibrationally excited H//2. An approximate calculation of absolute rates makes sense only if the sticking probability of atomic hydrogen on clean, room-temperature Si (110) 5 multiplied by 1 is near unity.

Original language	English
Title of host publication	J Vac Sci Technol
Pages	397-399
Number of pages	3
Volume	14
Edition	1
Publication status	Published - 1976 Jan
Event	Proc of Natl Symp of AVS, 23rd - Chicago, IL, USA Duration: 1976 Sep 21 → 1976 Sep 24

Other

Other	Proc of Natl Symp of AVS, 23rd
City	Chicago, IL, USA
Period	76/9/21 → 76/9/24

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "KINETICS OF THE GENERATION OF ATOMIC HYDROGEN AND ITS ADSORPTION ON Si(110).",

abstract = "The rate of change of uv photoemission spectroscopy (UPS) spectral features accompanying formation of the monohydride phase on Si(110)5 multiplied by 1 is measured as a function of H//2 pressure and W filament temperature in a thermal activation source. It is shown that an equilibrium thermodynamic calculation can reproduce the observed rates only if the adsorbing species produced at the hot filaments is atomic H and not vibrationally excited H//2. An approximate calculation of absolute rates makes sense only if the sticking probability of atomic hydrogen on clean, room-temperature Si (110) 5 multiplied by 1 is near unity.",

author = "Toshio Sakurai and Cardillo, {M. J.} and Hagstrum, {H. D.}",

year = "1976",

month = jan,

language = "English",

volume = "14",

pages = "397--399",

booktitle = "J Vac Sci Technol",

edition = "1",

note = "Proc of Natl Symp of AVS, 23rd ; Conference date: 21-09-1976 Through 24-09-1976",

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TY - CHAP

T1 - KINETICS OF THE GENERATION OF ATOMIC HYDROGEN AND ITS ADSORPTION ON Si(110).

AU - Sakurai, Toshio

AU - Cardillo, M. J.

AU - Hagstrum, H. D.

PY - 1976/1

Y1 - 1976/1

N2 - The rate of change of uv photoemission spectroscopy (UPS) spectral features accompanying formation of the monohydride phase on Si(110)5 multiplied by 1 is measured as a function of H//2 pressure and W filament temperature in a thermal activation source. It is shown that an equilibrium thermodynamic calculation can reproduce the observed rates only if the adsorbing species produced at the hot filaments is atomic H and not vibrationally excited H//2. An approximate calculation of absolute rates makes sense only if the sticking probability of atomic hydrogen on clean, room-temperature Si (110) 5 multiplied by 1 is near unity.

AB - The rate of change of uv photoemission spectroscopy (UPS) spectral features accompanying formation of the monohydride phase on Si(110)5 multiplied by 1 is measured as a function of H//2 pressure and W filament temperature in a thermal activation source. It is shown that an equilibrium thermodynamic calculation can reproduce the observed rates only if the adsorbing species produced at the hot filaments is atomic H and not vibrationally excited H//2. An approximate calculation of absolute rates makes sense only if the sticking probability of atomic hydrogen on clean, room-temperature Si (110) 5 multiplied by 1 is near unity.

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M3 - Chapter

AN - SCOPUS:0016903733

VL - 14

SP - 397

EP - 399

BT - J Vac Sci Technol

T2 - Proc of Natl Symp of AVS, 23rd

Y2 - 21 September 1976 through 24 September 1976

ER -

KINETICS OF THE GENERATION OF ATOMIC HYDROGEN AND ITS ADSORPTION ON Si(110).

Abstract

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