Kinetics of reactive ion etching upon single-walled carbon nanotubes

Toshiaki Kato, Rikizo Hatakeyama

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The remarkable etching reaction of single-walled carbon nanotubes (SWNTs) has been observed in their growth of the parameter-controlled plasma chemical vapor deposition (CVD). The time evolution study of the SWNTs growth leads to establishing a growth equation which can completely express the growth kinetics of SWNTs in the plasma CVD. The growth equation is found to reveal that there are several key parameters which directly affect the etching reaction of SWNTs. Furthermore, such kinetics of the SWNT etching in plasmas can perfectly be explained with a reactive ion etching model.

Original languageEnglish
Article number031502
JournalApplied Physics Letters
Volume92
Issue number3
DOIs
Publication statusPublished - 2008 Feb 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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