Kinetics of photon-stimulated desorption of positive ions from a HF-treated Si surface

M. Niwano, Y. Takeda, Y. Takakuwa, N. Miyamoto

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Kinetics of photon-stimulated-desorption (PSD) of positive ions from a Si surface treated with a hydrofluoric acid (HF) solution has been investigated using synchroton radiation (SR) in the vacuum-ultraviolet (VUV) region. Mass analysis of the PSD ions is performed with a time-of-flight technique. PSD of H+ and O+ ions is observed during exposure of the surface to VUV-SR. It is found that the O+ ion desorption rate initially rises and subsequently decreases as the amount of photon exposure is increased, while the H+ ion desorption rate decreases exponentially with photon exposure. The photon-exposure dependence of the O+ desorption rate is interpreted in terms of a two-step first-order process in which OH bond scission in a surface SiOH complex initially occurs to give rise to desorption of H+ and then the remaining Si-O bond is ruptured to produce O+ PSD ions. The H+ PSD reaction is found to be a single-step process.

Original languageEnglish
Pages (from-to)349-358
Number of pages10
JournalSurface Science
Volume261
Issue number1-3
DOIs
Publication statusPublished - 1992 Jan 15

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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