Kinetics of dissociative adsorption of dichlorosilane on Si(100)2 × 1

Hitoshi Sakamoto; Yuji Takakuwa; Toyokazu Hori; Tetsuhiro Horie; Maki Suemitsu; Nobuo Miyamoto

doi:10.1016/S0169-4332(96)00485-0

Kinetics of dissociative adsorption of dichlorosilane on Si(100)2 × 1

Hitoshi Sakamoto, Yuji Takakuwa, Toyokazu Hori, Tetsuhiro Horie, Maki Suemitsu, Nobuo Miyamoto

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The temperature dependence of the dichlorosilane (SiH ₂ Cl ₂ ) dissociative adsorption kinetics on a Si(100)2 × 1 surface was investigated using ultraviolet photoelectron spectroscopy (UPS). By observing in situ the UPS intensity of the surface state originated from the dimer dangling bonds, the time evolutions of the surface chlorine and hydrogen coverage during SiH ₂ Cl ₂ exposure onto a Si(100) clean surface were obtained. They were successfully fitted with a rate equation assuming a competition between the SiH ₂ Cl ₂ adsorption and the desorption of H ₂ , HCl, and SiCl. The reaction order and the reaction coefficient for the SiH ₂ Cl ₂ adsorption at RT were determined from the fitting to be 1.75 and 3.0 × 10 ^-2 ML/s, respectively, while they were changed to 1.80 and 9.0 × 10 ^-3 ML/s at 400°C or to 3.20 and 6.0 × 10 ^-3 ML/s at 600°C as the adsorption temperature was raised. Based on this strong temperature dependence of the parameters, we proposed a surface reaction model of the SiH ₂ Cl ₂ adsorption kinetics, which includes temperature dependent partial decomposition of the adsorption precursors.

Original language	English
Pages (from-to)	68-74
Number of pages	7
Journal	Applied Surface Science
Volume	107
DOIs	https://doi.org/10.1016/S0169-4332(96)00485-0
Publication status	Published - 1996 Nov

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Sakamoto, H., Takakuwa, Y., Hori, T., Horie, T., Suemitsu, M., & Miyamoto, N. (1996). Kinetics of dissociative adsorption of dichlorosilane on Si(100)2 × 1. Applied Surface Science, 107, 68-74. https://doi.org/10.1016/S0169-4332(96)00485-0

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title = "Kinetics of dissociative adsorption of dichlorosilane on Si(100)2 × 1",

abstract = " The temperature dependence of the dichlorosilane (SiH 2 Cl 2 ) dissociative adsorption kinetics on a Si(100)2 × 1 surface was investigated using ultraviolet photoelectron spectroscopy (UPS). By observing in situ the UPS intensity of the surface state originated from the dimer dangling bonds, the time evolutions of the surface chlorine and hydrogen coverage during SiH 2 Cl 2 exposure onto a Si(100) clean surface were obtained. They were successfully fitted with a rate equation assuming a competition between the SiH 2 Cl 2 adsorption and the desorption of H 2 , HCl, and SiCl. The reaction order and the reaction coefficient for the SiH 2 Cl 2 adsorption at RT were determined from the fitting to be 1.75 and 3.0 × 10 -2 ML/s, respectively, while they were changed to 1.80 and 9.0 × 10 -3 ML/s at 400°C or to 3.20 and 6.0 × 10 -3 ML/s at 600°C as the adsorption temperature was raised. Based on this strong temperature dependence of the parameters, we proposed a surface reaction model of the SiH 2 Cl 2 adsorption kinetics, which includes temperature dependent partial decomposition of the adsorption precursors. ",

author = "Hitoshi Sakamoto and Yuji Takakuwa and Toyokazu Hori and Tetsuhiro Horie and Maki Suemitsu and Nobuo Miyamoto",

year = "1996",

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doi = "10.1016/S0169-4332(96)00485-0",

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T1 - Kinetics of dissociative adsorption of dichlorosilane on Si(100)2 × 1

AU - Sakamoto, Hitoshi

AU - Takakuwa, Yuji

AU - Hori, Toyokazu

AU - Horie, Tetsuhiro

AU - Suemitsu, Maki

AU - Miyamoto, Nobuo

PY - 1996/11

Y1 - 1996/11

N2 - The temperature dependence of the dichlorosilane (SiH 2 Cl 2 ) dissociative adsorption kinetics on a Si(100)2 × 1 surface was investigated using ultraviolet photoelectron spectroscopy (UPS). By observing in situ the UPS intensity of the surface state originated from the dimer dangling bonds, the time evolutions of the surface chlorine and hydrogen coverage during SiH 2 Cl 2 exposure onto a Si(100) clean surface were obtained. They were successfully fitted with a rate equation assuming a competition between the SiH 2 Cl 2 adsorption and the desorption of H 2 , HCl, and SiCl. The reaction order and the reaction coefficient for the SiH 2 Cl 2 adsorption at RT were determined from the fitting to be 1.75 and 3.0 × 10 -2 ML/s, respectively, while they were changed to 1.80 and 9.0 × 10 -3 ML/s at 400°C or to 3.20 and 6.0 × 10 -3 ML/s at 600°C as the adsorption temperature was raised. Based on this strong temperature dependence of the parameters, we proposed a surface reaction model of the SiH 2 Cl 2 adsorption kinetics, which includes temperature dependent partial decomposition of the adsorption precursors.

AB - The temperature dependence of the dichlorosilane (SiH 2 Cl 2 ) dissociative adsorption kinetics on a Si(100)2 × 1 surface was investigated using ultraviolet photoelectron spectroscopy (UPS). By observing in situ the UPS intensity of the surface state originated from the dimer dangling bonds, the time evolutions of the surface chlorine and hydrogen coverage during SiH 2 Cl 2 exposure onto a Si(100) clean surface were obtained. They were successfully fitted with a rate equation assuming a competition between the SiH 2 Cl 2 adsorption and the desorption of H 2 , HCl, and SiCl. The reaction order and the reaction coefficient for the SiH 2 Cl 2 adsorption at RT were determined from the fitting to be 1.75 and 3.0 × 10 -2 ML/s, respectively, while they were changed to 1.80 and 9.0 × 10 -3 ML/s at 400°C or to 3.20 and 6.0 × 10 -3 ML/s at 600°C as the adsorption temperature was raised. Based on this strong temperature dependence of the parameters, we proposed a surface reaction model of the SiH 2 Cl 2 adsorption kinetics, which includes temperature dependent partial decomposition of the adsorption precursors.

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