Kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2: Effect of added H2, SiH4, and Si2H6

Takeyasu Saito, Yukihiro Shimogaki, Yasuyuki Egashira, Katsuro Sugawara, Katsumi Takahiro, Shinji Nagata, Sadae Yamaguchi, Hiroshi Komiyama

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3 Citations (Scopus)


This paper describes reaction kinetics of chemical vapor deposition of WSix films from WF6 and SiH2Cl2, focusing on the effect of added H2, SiH4, and Si2H6 as an active reaction initiator. Our studies indicate that the temperature at which film formation is extinguished, Tex, can be lowered by introducing H2 instead of the standard Ar carrier gas. For a SiH2Cl2/WF6 pressure ratio of 20, H2 addition changed the deposition mode from selective W deposition to blanket WSix deposition. The added H2 also improved the step-coverage profile for substrate temperatures below 600 °C. Measured step coverage profiles indicate that the activation energy of deposition species was 147 kJ/mol. Adding either SiH4 or Si2H6 can assist the film-forming reactions to achieve acceptable Si/W atomic composition ratios. Under these conditions, the residual fluorine concentration remained at acceptably low levels that are typical of conventional WF6/SiH2Cl2 CVD processes.

Original languageEnglish
Pages (from-to)1994-2000
Number of pages7
JournalMicroelectronic Engineering
Issue number10
Publication statusPublished - 2006 Oct


  • Chemical vapor deposition
  • Reaction kinetics
  • Silicide
  • Tungsten

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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