Kinetic study on oxidation of Si(111) surfaces using H2O

Seiichi Takami, Yasuyuki Egashira, Hiroshi Komiyama

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7 Citations (Scopus)

Abstract

Using X-ray photoelectron spectroscopy, we investigated the temperature dependence of the reaction rates at which oxidation of a hydrogen-terminated Si (Si-H) surface proceeds using H2O vapor. The rates of oxidation at temperatures lower than 250°C are not sensitive to the oxidation temperature or the number of impinging HsO molecules. This result indicates that the rate of oxidation of Si-H at lower temperatures are controlled by generation of activated Si-Si back bonds on Si substrates. On the other hand, the rates of oxidation at temperatures higher than 450°C are controlled by the rate at which hydrogen desorbs from the Si-H surface.

Original languageEnglish
Pages (from-to)2288-2291
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number4 A
DOIs
Publication statusPublished - 1997 Apr

Keywords

  • HO
  • Kinetic study
  • Oxidation
  • Si (111)
  • Temperature dependence

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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