Kinetic analysis of surface adsorption layer in GaAs(001) metalorganic vapor phase epitaxy by in situ reflectance anisotropy spectroscopy

Momoko Deura, Masakazu Sugiyama, Takayuki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A kinetic analysis of the surface adsorption layer of III/V semiconductors in metalorganic vapor phase epitaxy (MOVPE) was carried out by monitoring the temporal behavior of surface reconstruction that is assumed to be maintained during growth with the adsorption layers. A GaAs(001) surface was observed in situ using reflectance anisotropy spectroscopy (RAS), and both spectroscopic and kinetic analyses were performed when trimethylgallium (TMGa) was supplied intermittently while the supply of tertiarybutylarsine (TBAs) was continuous. When the flow of TMGa was switched on/off, the transient RA signal exhibited time constants of 0.2-20s. By observing the dependence of these time constants on the partial pressure of TMGa and substrate temperature, we considered that the time constant (t0) at the start of TMGa supply corresponds to the adsorption of Ga from the gas phase to the adsorption layer, and two constants (i.e., t1 and t2) at the end of TMGa supply are associated with the crystallization of adsorbed Ga and the recovery of surface reconstruction, respectively. The equivalent thickness of the adsorption layer was estimated to be 0.19 monolayer thickness at 550°C.

Original languageEnglish
Pages (from-to)6519-6524
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number10 A
DOIs
Publication statusPublished - 2007 Oct 9

Keywords

  • GaAs
  • Kinetics
  • Metalorganic vapor phase epitaxy (MOVPE)
  • Reflectance anisotropy spectroscopy (RAS)
  • Surface adsorption layer
  • Surface processes
  • Tertiarybutylarsine (TBAs)
  • Trimethylgallium (TMGa)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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