Key factors for metal organic chemical vapor deposition of InGaN films with high InN molar fraction

Yu Huai Liu; Fang Wang; Wei Zhang; Shou Yi Yang; Yuan Tao Zhang; Ryuji Katayama; Takashi Matsuoka

doi:10.4028/www.scientific.net/AMM.341-342.204

Key factors for metal organic chemical vapor deposition of InGaN films with high InN molar fraction

Yu Huai Liu, Fang Wang, Wei Zhang, Shou Yi Yang, Yuan Tao Zhang, Ryuji Katayama, Takashi Matsuoka

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InGaN with high InN molar fraction is a promising material for next generation optoelectronic devices and electronic devices such as solar cells, laser diodes for communications, and high mobility transistors and so on. However, the growth of InGaN with high InN molar fraction is still a tough challenge for metal organic chemical vapor deposition (MOCVD). This paper provides experimental clues for the key factors, including the influences of the growth temperature, the V/III ratio, the group III supply ratio, and the reactor pressure. In addition, the effectiveness of the pressurized MOCVD growth of the InGaN with high InN molar fraction will be testified.

Original language	English
Title of host publication	Energy Research and Power Engineering
Pages	204-207
Number of pages	4
DOIs	https://doi.org/10.4028/www.scientific.net/AMM.341-342.204
Publication status	Published - 2013 Aug 30
Event	2013 International Conference on Energy Research and Power Engineering, ERPE 2013 - Zhengzhou, Henan, China Duration: 2013 May 24 → 2013 May 25

Publication series

Name	Applied Mechanics and Materials
Volume	341-342
ISSN (Print)	1660-9336
ISSN (Electronic)	1662-7482

Other

Other	2013 International Conference on Energy Research and Power Engineering, ERPE 2013
Country	China
City	Zhengzhou, Henan
Period	13/5/24 → 13/5/25

Keywords

InGaN
InN molar fraction
MOCVD
Reactor pressure
V/III ratio

ASJC Scopus subject areas

Engineering(all)

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Liu, Y. H., Wang, F., Zhang, W., Yang, S. Y., Zhang, Y. T., Katayama, R., & Matsuoka, T. (2013). Key factors for metal organic chemical vapor deposition of InGaN films with high InN molar fraction. In Energy Research and Power Engineering (pp. 204-207). (Applied Mechanics and Materials; Vol. 341-342). https://doi.org/10.4028/www.scientific.net/AMM.341-342.204

Key factors for metal organic chemical vapor deposition of InGaN films with high InN molar fraction. / Liu, Yu Huai; Wang, Fang; Zhang, Wei; Yang, Shou Yi; Zhang, Yuan Tao; Katayama, Ryuji; Matsuoka, Takashi.

Energy Research and Power Engineering. 2013. p. 204-207 (Applied Mechanics and Materials; Vol. 341-342).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, YH, Wang, F, Zhang, W, Yang, SY, Zhang, YT, Katayama, R & Matsuoka, T 2013, Key factors for metal organic chemical vapor deposition of InGaN films with high InN molar fraction. in Energy Research and Power Engineering. Applied Mechanics and Materials, vol. 341-342, pp. 204-207, 2013 International Conference on Energy Research and Power Engineering, ERPE 2013, Zhengzhou, Henan, China, 13/5/24. https://doi.org/10.4028/www.scientific.net/AMM.341-342.204

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abstract = "InGaN with high InN molar fraction is a promising material for next generation optoelectronic devices and electronic devices such as solar cells, laser diodes for communications, and high mobility transistors and so on. However, the growth of InGaN with high InN molar fraction is still a tough challenge for metal organic chemical vapor deposition (MOCVD). This paper provides experimental clues for the key factors, including the influences of the growth temperature, the V/III ratio, the group III supply ratio, and the reactor pressure. In addition, the effectiveness of the pressurized MOCVD growth of the InGaN with high InN molar fraction will be testified.",

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AU - Katayama, Ryuji

AU - Matsuoka, Takashi

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AB - InGaN with high InN molar fraction is a promising material for next generation optoelectronic devices and electronic devices such as solar cells, laser diodes for communications, and high mobility transistors and so on. However, the growth of InGaN with high InN molar fraction is still a tough challenge for metal organic chemical vapor deposition (MOCVD). This paper provides experimental clues for the key factors, including the influences of the growth temperature, the V/III ratio, the group III supply ratio, and the reactor pressure. In addition, the effectiveness of the pressurized MOCVD growth of the InGaN with high InN molar fraction will be testified.

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