TY - GEN
T1 - Key factors for metal organic chemical vapor deposition of InGaN films with high InN molar fraction
AU - Liu, Yu Huai
AU - Wang, Fang
AU - Zhang, Wei
AU - Yang, Shou Yi
AU - Zhang, Yuan Tao
AU - Katayama, Ryuji
AU - Matsuoka, Takashi
PY - 2013
Y1 - 2013
N2 - InGaN with high InN molar fraction is a promising material for next generation optoelectronic devices and electronic devices such as solar cells, laser diodes for communications, and high mobility transistors and so on. However, the growth of InGaN with high InN molar fraction is still a tough challenge for metal organic chemical vapor deposition (MOCVD). This paper provides experimental clues for the key factors, including the influences of the growth temperature, the V/III ratio, the group III supply ratio, and the reactor pressure. In addition, the effectiveness of the pressurized MOCVD growth of the InGaN with high InN molar fraction will be testified.
AB - InGaN with high InN molar fraction is a promising material for next generation optoelectronic devices and electronic devices such as solar cells, laser diodes for communications, and high mobility transistors and so on. However, the growth of InGaN with high InN molar fraction is still a tough challenge for metal organic chemical vapor deposition (MOCVD). This paper provides experimental clues for the key factors, including the influences of the growth temperature, the V/III ratio, the group III supply ratio, and the reactor pressure. In addition, the effectiveness of the pressurized MOCVD growth of the InGaN with high InN molar fraction will be testified.
KW - InGaN
KW - InN molar fraction
KW - MOCVD
KW - Reactor pressure
KW - V/III ratio
UR - http://www.scopus.com/inward/record.url?scp=84882935739&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84882935739&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMM.341-342.204
DO - 10.4028/www.scientific.net/AMM.341-342.204
M3 - Conference contribution
AN - SCOPUS:84882935739
SN - 9783037857588
T3 - Applied Mechanics and Materials
SP - 204
EP - 207
BT - Energy Research and Power Engineering
T2 - 2013 International Conference on Energy Research and Power Engineering, ERPE 2013
Y2 - 24 May 2013 through 25 May 2013
ER -