Key factors for metal organic chemical vapor deposition of InGaN films with high InN molar fraction

Yu Huai Liu, Fang Wang, Wei Zhang, Shou Yi Yang, Yuan Tao Zhang, Ryuji Katayama, Takashi Matsuoka

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InGaN with high InN molar fraction is a promising material for next generation optoelectronic devices and electronic devices such as solar cells, laser diodes for communications, and high mobility transistors and so on. However, the growth of InGaN with high InN molar fraction is still a tough challenge for metal organic chemical vapor deposition (MOCVD). This paper provides experimental clues for the key factors, including the influences of the growth temperature, the V/III ratio, the group III supply ratio, and the reactor pressure. In addition, the effectiveness of the pressurized MOCVD growth of the InGaN with high InN molar fraction will be testified.

Original languageEnglish
Title of host publicationEnergy Research and Power Engineering
Pages204-207
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 International Conference on Energy Research and Power Engineering, ERPE 2013 - Zhengzhou, Henan, China
Duration: 2013 May 24 → 2013 May 25

Publication series

NameApplied Mechanics and Materials
Volume341-342
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Other

Other2013 International Conference on Energy Research and Power Engineering, ERPE 2013
CountryChina
CityZhengzhou, Henan
Period13/5/24 → 13/5/25

Keywords

  • InGaN
  • InN molar fraction
  • MOCVD
  • Reactor pressure
  • V/III ratio

ASJC Scopus subject areas

  • Engineering(all)

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