Junction parameter control of Bi2Sr2CaCu2O8+δ stacked junctions by annealing

K. Inomata, T. Kawae, K. Nakajima, S. J. Kim, T. Yamashita

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)


A study was performed on junction parameter control of Bi2Sr2CaCu2O8+δ stacked junctions. The relationship of critical current density (Jc), junction resistance (RN) and the carrier density was clarified in Bi2Sr2CaCu2O8+δ whiskers by changing the carrier density with an annealing process. The results showed that the values of Jc and RN was controlled by the change in the carrier density.

Original languageEnglish
Pages (from-to)769-771
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2003 Feb 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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