A study was performed on junction parameter control of Bi2Sr2CaCu2O8+δ stacked junctions. The relationship of critical current density (Jc), junction resistance (RN) and the carrier density was clarified in Bi2Sr2CaCu2O8+δ whiskers by changing the carrier density with an annealing process. The results showed that the values of Jc and RN was controlled by the change in the carrier density.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)