Junction area dependence of critical current density in Bi-2212 stacked junction

T. Kawae, K. Inomata, S. J. Kim, Y. I. Latyshev, K. Nakajima, T. Yamashita, S. Kishida, T. Hatano

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We report the characteristics of stacked junctions fabricated by the focused ion beam etching method on a Bi-2212 whisker with low carrier concentration. In order to achieve low carrier concentration, the whisker edges were etched and the sample was annealed in 1 atm of flowing Ar at 200 °C for 1h. A drop of critical current density (Jc) occurred when junction area (S) was decreased to the submicron range, and then the charging energy of the stack (Ec) was comparable to Josephson coupling energy (EJ). The Ec/EJ-Jc curves of the samples were similar to the theoretical curves which explains a fall of Jc due to Coulomb blockade for low Tc superconductor. Also, the annealed sample showed high junction resistance and low EJ, owing to a low carrier concentration by annealing.

Original languageEnglish
Pages (from-to)1102-1105
Number of pages4
JournalSuperconductor Science and Technology
Volume14
Issue number12
DOIs
Publication statusPublished - 2001 Dec 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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