TY - JOUR
T1 - Joule's law for organic transistors exploration
T2 - Case of contact resistance
AU - Xu, Yong
AU - Liu, Chuan
AU - Li, Yun
AU - Minari, Takeo
AU - Darmawan, Peter
AU - Balestra, Francis
AU - Ghibaudo, Gerard
AU - Tsukagoshi, Kazuhito
N1 - Funding Information:
This study was partially supported by a Grant-in-Aid for Scientific Research (No. 218505) from the Ministry of Education, Culture, Sport, Science and Technology of Japan.
PY - 2013/2/14
Y1 - 2013/2/14
N2 - Joule's law opens a straightforward way to explore the operating mechanism of organic field-effect transistors, from the angle of inner transported heating. The microscopic dissipated power is calculated from the local conductivity and electric field, which solves the widespread difficulties in building a macroscopic model to determine the contact resistance. The result quantitatively discloses the correlation between the contact resistance and the charge transport properties covering energetic disorder, band-like and hopping transport as well as carrier mobility anisotropy. It turns out that in a staggered configuration with ideal Ohmic contact, the contact resistance is highly affected by the charge transport.
AB - Joule's law opens a straightforward way to explore the operating mechanism of organic field-effect transistors, from the angle of inner transported heating. The microscopic dissipated power is calculated from the local conductivity and electric field, which solves the widespread difficulties in building a macroscopic model to determine the contact resistance. The result quantitatively discloses the correlation between the contact resistance and the charge transport properties covering energetic disorder, band-like and hopping transport as well as carrier mobility anisotropy. It turns out that in a staggered configuration with ideal Ohmic contact, the contact resistance is highly affected by the charge transport.
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U2 - 10.1063/1.4792066
DO - 10.1063/1.4792066
M3 - Article
AN - SCOPUS:84874303308
VL - 113
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
M1 - 064507
ER -