JOINING OF REACTION BONDED Si//3N//4 USING Al.

In order to develop a joining technique for reaction bonded Si//3N//4 which ensures good high-temperature strength of joined body, Al foil was used as an insert material. The joining was conducted in 1 atm N//2 atmosphere at temperatures from 1470 to 1970 K, under pressures up to 20 MPa for 1800 s. Direct joining without any insert material was also carried out for comparison. The microstructure of joined regions was observed with a high resolution electron microscope, and the strength of the interface was measured by 3-point bending test as a function of joining temperature and joining pressure. The results obtained are summarized.