Abstract
An ERL-based next-generation synchrotron light source and free electron laser require an electron beam of large current and small emittance. In order to realize an electron gun satisfying such requirements, we are developing an NEA-GaAs photocathode DC-gun. The gun is based on an existing DC-gun of Japan Atomic Energy Agency (JAEA) ERL-FEL and designed to provide a beam with energy of 250 keV and average current of 50 mA. Conditioning of a high voltage power supply has been completed up to design the target voltage of 250 kV. We have also decided to use superlattice semiconductor as a new type of photocathode with higher performance than an existing technology. We fabricated bulk-AlGaAs photocathode samples by molecular beam epitaxy in order to optimize the superlattice structure. We measured quantum efficiency and lifetime of the samples and achieved twice QE of a bulk-GaAs photocathode and longer NEA surface life than that of the bulk-GaAs photocathode.
| Original language | English |
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| Pages | 319-322 |
| Number of pages | 4 |
| Publication status | Published - 2006 Dec 1 |
| Event | 28th International Free Electron Laser Conference, FEL 2006 - Berlin, Germany Duration: 2006 Aug 27 → 2006 Sep 1 |
Other
| Other | 28th International Free Electron Laser Conference, FEL 2006 |
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| Country | Germany |
| City | Berlin |
| Period | 06/8/27 → 06/9/1 |
ASJC Scopus subject areas
- Nuclear and High Energy Physics