IVB-4 Dislocation Free Gate Process Using In Situ Doped Polysilicon Thin Films by Crystallization-In-duced Stress of the Films

Chiemi M. Hashimoto; Hideo Miura; Kyoichiro Asayama; Hiroyuki Ohta; Shuji Ikeda; Hideo Miura; Hiroyuki Ohta; Kyoichiro Asayama; Shuji Ikeda

doi:10.1109/16.239806

IVB-4 Dislocation Free Gate Process Using In Situ Doped Polysilicon Thin Films by Crystallization-In-duced Stress of the Films

Chiemi M. Hashimoto, Hideo Miura, Kyoichiro Asayama, Hiroyuki Ohta, Shuji Ikeda, Hideo Miura, Hiroyuki Ohta, Kyoichiro Asayama, Shuji Ikeda

ENG - Fracture and Reliability Research Institute

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2127-2128
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	40
Issue number	11
DOIs	https://doi.org/10.1109/16.239806
Publication status	Published - 1993 Nov

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.239806

Cite this

IVB-4 Dislocation Free Gate Process Using In Situ Doped Polysilicon Thin Films by Crystallization-In-duced Stress of the Films. / Hashimoto, Chiemi M.; Miura, Hideo; Asayama, Kyoichiro; Ohta, Hiroyuki; Ikeda, Shuji; Miura, Hideo; Ohta, Hiroyuki; Asayama, Kyoichiro; Ikeda, Shuji.

In: IEEE Transactions on Electron Devices, Vol. 40, No. 11, 11.1993, p. 2127-2128.

Research output: Contribution to journal › Article › peer-review

Hashimoto, Chiemi M. ; Miura, Hideo ; Asayama, Kyoichiro ; Ohta, Hiroyuki ; Ikeda, Shuji ; Miura, Hideo ; Ohta, Hiroyuki ; Asayama, Kyoichiro ; Ikeda, Shuji. / IVB-4 Dislocation Free Gate Process Using In Situ Doped Polysilicon Thin Films by Crystallization-In-duced Stress of the Films. In: IEEE Transactions on Electron Devices. 1993 ; Vol. 40, No. 11. pp. 2127-2128.

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AU - Ikeda, Shuji

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