IVB-4 Dislocation Free Gate Process Using In Situ Doped Polysilicon Thin Films by Crystallization-In-duced Stress of the Films

Chiemi M. Hashimoto, Hideo Miura, Kyoichiro Asayama, Hiroyuki Ohta, Shuji Ikeda, Hideo Miura, Hiroyuki Ohta, Kyoichiro Asayama, Shuji Ikeda

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)2127-2128
Number of pages2
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 1993 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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