@article{3fdfd3243e304919a4288bd263c4e6fb,
title = "IVB-4 Dislocation Free Gate Process Using In Situ Doped Polysilicon Thin Films by Crystallization-In-duced Stress of the Films",
author = "Hashimoto, {Chiemi M.} and Hideo Miura and Kyoichiro Asayama and Hiroyuki Ohta and Shuji Ikeda and Hideo Miura and Hiroyuki Ohta and Kyoichiro Asayama and Shuji Ikeda",
year = "1993",
month = nov,
doi = "10.1109/16.239806",
language = "English",
volume = "40",
pages = "2127--2128",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}