IVA-4 Room-Temperature Operation of 645-nm AlxGa1−xAs Multi-Quantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy

IVA-4 Room-Temperature Operation of 645-nm Al_xGa_1−xAs Multi-Quantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy

Hidetoshi Iwamura, Tadashi Saku, Yoshiro Hirayama, Yoshifumi Suzuki, Hiroshi Okamoto

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2540
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1985.22341
Publication status	Published - 1985 Nov

@article{486a6bcae63944c79831a424c5b37dc1,

title = "IVA-4 Room-Temperature Operation of 645-nm AlxGa1−xAs Multi-Quantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy",

author = "Hidetoshi Iwamura and Tadashi Saku and Yoshiro Hirayama and Yoshifumi Suzuki and Hiroshi Okamoto",

year = "1985",

month = nov,

doi = "10.1109/T-ED.1985.22341",

language = "English",

volume = "32",

pages = "2540",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - IVA-4 Room-Temperature Operation of 645-nm AlxGa1−xAs Multi-Quantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy

AU - Iwamura, Hidetoshi

AU - Saku, Tadashi

AU - Hirayama, Yoshiro

AU - Suzuki, Yoshifumi

AU - Okamoto, Hiroshi

PY - 1985/11

Y1 - 1985/11

UR - http://www.scopus.com/inward/record.url?scp=0022153413&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022153413&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1985.22341

DO - 10.1109/T-ED.1985.22341

M3 - Article

AN - SCOPUS:0022153413

VL - 32

SP - 2540

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11

ER -