@article{486a6bcae63944c79831a424c5b37dc1,
title = "IVA-4 Room-Temperature Operation of 645-nm AlxGa1−xAs Multi-Quantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy",
author = "Hidetoshi Iwamura and Tadashi Saku and Yoshiro Hirayama and Yoshifumi Suzuki and Hiroshi Okamoto",
note = "Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",
year = "1985",
month = nov,
doi = "10.1109/T-ED.1985.22341",
language = "English",
volume = "32",
pages = "2540",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}