IVA-4 Room-Temperature Operation of 645-nm AlxGa1−xAs Multi-Quantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy

Hidetoshi Iwamura, Tadashi Saku, Yoshiro Hirayama, Yoshifumi Suzuki, Hiroshi Okamoto

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)2540
Number of pages1
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 1985 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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