Itinerant 4f electron in CeRu2Si2

A. K. Albessard, T. Ebihara, I. Umehara, K. Satoh, Y. Onuki, H. Aoki, S. Uji, T. Shimizu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have measured the magnetoresistance and the de Haas-van Alphen effect in CeRu2Si2 to clarify the nature of the 4f electron in CeRu2Si2.

Original languageEnglish
Pages (from-to)147-149
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume186-188
Issue numberC
DOIs
Publication statusPublished - 1993 May 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Itinerant 4f electron in CeRu<sub>2</sub>Si<sub>2</sub>'. Together they form a unique fingerprint.

  • Cite this

    Albessard, A. K., Ebihara, T., Umehara, I., Satoh, K., Onuki, Y., Aoki, H., Uji, S., & Shimizu, T. (1993). Itinerant 4f electron in CeRu2Si2. Physica B: Physics of Condensed Matter, 186-188(C), 147-149. https://doi.org/10.1016/0921-4526(93)90518-B