Isotopic labeling study of the oxygen diffusion in HfO2/SiO 2/Si

Ming Zhao, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Uematsu, Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara, Heiji Watanabe, Kenji Shiraishi, Toyohiro Chikyow, Keisaku Yamada

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13 Citations (Scopus)

Abstract

The characteristic oxygen diffusion in HfO2/SiO2/Si structure during the annealing in oxygen has been investigated by high-resolution Rutherford backscattering spectroscopy in combination with oxygen isotope substitution at 900 °C in 0.1 Torr 18O 2. The observed 18O profile suggests that oxygen molecules are decomposed into atomic oxygen in the HfO2 layer and diffuse through the oxide layer via exchange mechanism. This is also supported by the observed activation energy of ∼0.6 eV for the growth of the interfacial SiO2 layer.

Original languageEnglish
Article number133510
JournalApplied Physics Letters
Volume90
Issue number13
DOIs
Publication statusPublished - 2007 Apr 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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