Irradiation-induced improvement of crystalline quality of epitaxially grown Ag thin films on Si substrates

K. Takahiro, Shinji Nagata, S. Yamaguchi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report the Rutherford backscattering spectroscopy/channeling studies of epitaxial grown Ag films on Si(100) substrates irradiated with fast ions ( 12 C ++ , 19 F ++ , 28 Si ++ ) in the energy range between 0.5 and 4 MeV at 200 and - 150°C. The quality of the Ag films is improved considerably by ion irradiation. Irradiation with 0.5 MeV 28 Si ions to 2×10 16 /cm 2 at 200°C, for example, reduces the channeling minimum yield from 55% to 6% at the Ag surface. The improvement of crystalline quality is brought about by a decrease in mosaic spread in the Ag film. Also, it is found that the higher the crystallinity, the more radiation-induced defects are produced. The mechanism involved in the irradiation-induced improvement is discussed.

Original languageEnglish
Pages (from-to)2828-2830
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number19
DOIs
Publication statusPublished - 1996 Nov 4

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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