Abstract
Improvement in the crystal quality of epitaxial Ag films on Si (111) substrates using 0.5 MeV Si+ irradiation was analyzed. Investigations show a decrease in the population of twinning grains and mosaic spread of the films. It was found that the low-temperature irradiation lead to the atomic rearrangement at the grain boundaries. The results show that the irradiation-induced improvement in crystal quality (IIICQ) for the epitaxial films was similar to the ion bombardment enhanced grain growth.
| Original language | English |
|---|---|
| Pages (from-to) | 4166-4170 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 96 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2004 Oct 15 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
Fingerprint Dive into the research topics of 'Irradiation-induced improvement in crystal quality of epitaxial Ag/Si(111) films'. Together they form a unique fingerprint.
Cite this
Takahiro, K., Kawatsura, K., Nagata, S., Yamamoto, S., & Naramoto, H. (2004). Irradiation-induced improvement in crystal quality of epitaxial Ag/Si(111) films. Journal of Applied Physics, 96(8), 4166-4170. https://doi.org/10.1063/1.1791753