Irradiation-induced improvement in crystal quality of epitaxial Ag/Si(111) films

Katsumi Takahiro, Kiyoshi Kawatsura, Shinji Nagata, Shunya Yamamoto, Hiroshi Naramoto

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4 Citations (Scopus)

Abstract

Improvement in the crystal quality of epitaxial Ag films on Si (111) substrates using 0.5 MeV Si+ irradiation was analyzed. Investigations show a decrease in the population of twinning grains and mosaic spread of the films. It was found that the low-temperature irradiation lead to the atomic rearrangement at the grain boundaries. The results show that the irradiation-induced improvement in crystal quality (IIICQ) for the epitaxial films was similar to the ion bombardment enhanced grain growth.

Original languageEnglish
Pages (from-to)4166-4170
Number of pages5
JournalJournal of Applied Physics
Volume96
Issue number8
DOIs
Publication statusPublished - 2004 Oct 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Takahiro, K., Kawatsura, K., Nagata, S., Yamamoto, S., & Naramoto, H. (2004). Irradiation-induced improvement in crystal quality of epitaxial Ag/Si(111) films. Journal of Applied Physics, 96(8), 4166-4170. https://doi.org/10.1063/1.1791753