Irradiation-induced improvement in crystal quality of epitaxial Ag/Si(111) films

Katsumi Takahiro; Kiyoshi Kawatsura; Shinji Nagata; Shunya Yamamoto; Hiroshi Naramoto

doi:10.1063/1.1791753

Irradiation-induced improvement in crystal quality of epitaxial Ag/Si(111) films

Katsumi Takahiro, Kiyoshi Kawatsura, Shinji Nagata, Shunya Yamamoto, Hiroshi Naramoto

Materials Design Division

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Improvement in the crystal quality of epitaxial Ag films on Si (111) substrates using 0.5 MeV Si₊ irradiation was analyzed. Investigations show a decrease in the population of twinning grains and mosaic spread of the films. It was found that the low-temperature irradiation lead to the atomic rearrangement at the grain boundaries. The results show that the irradiation-induced improvement in crystal quality (IIICQ) for the epitaxial films was similar to the ion bombardment enhanced grain growth.

Original language	English
Pages (from-to)	4166-4170
Number of pages	5
Journal	Journal of Applied Physics
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.1791753
Publication status	Published - 2004 Oct 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "Improvement in the crystal quality of epitaxial Ag films on Si (111) substrates using 0.5 MeV Si+ irradiation was analyzed. Investigations show a decrease in the population of twinning grains and mosaic spread of the films. It was found that the low-temperature irradiation lead to the atomic rearrangement at the grain boundaries. The results show that the irradiation-induced improvement in crystal quality (IIICQ) for the epitaxial films was similar to the ion bombardment enhanced grain growth.",

author = "Katsumi Takahiro and Kiyoshi Kawatsura and Shinji Nagata and Shunya Yamamoto and Hiroshi Naramoto",

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AU - Takahiro, Katsumi

AU - Kawatsura, Kiyoshi

AU - Nagata, Shinji

AU - Yamamoto, Shunya

AU - Naramoto, Hiroshi

PY - 2004/10/15

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N2 - Improvement in the crystal quality of epitaxial Ag films on Si (111) substrates using 0.5 MeV Si+ irradiation was analyzed. Investigations show a decrease in the population of twinning grains and mosaic spread of the films. It was found that the low-temperature irradiation lead to the atomic rearrangement at the grain boundaries. The results show that the irradiation-induced improvement in crystal quality (IIICQ) for the epitaxial films was similar to the ion bombardment enhanced grain growth.

AB - Improvement in the crystal quality of epitaxial Ag films on Si (111) substrates using 0.5 MeV Si+ irradiation was analyzed. Investigations show a decrease in the population of twinning grains and mosaic spread of the films. It was found that the low-temperature irradiation lead to the atomic rearrangement at the grain boundaries. The results show that the irradiation-induced improvement in crystal quality (IIICQ) for the epitaxial films was similar to the ion bombardment enhanced grain growth.

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