Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

O. Fukuoka; N. Matsunami; M. Tazawa; T. Shimura; M. Sataka; Hiroyuki Sugai; S. Okayasu

doi:10.1016/j.nimb.2006.04.146

Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

O. Fukuoka, N. Matsunami, M. Tazawa, T. Shimura, M. Sataka, Hiroyuki Sugai, S. Okayasu

ENG - Quantum Science and Energy Engineering

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO₂ glass at 400 °C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification.

Original language	English
Pages (from-to)	295-299
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	250
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2006.04.146
Publication status	Published - 2006 Sept 1

Keywords

Al-doped ZnO
Conductivity
Ion irradiation
Optical property

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nimb.2006.04.146

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abstract = "Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO2 glass at 400 °C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification.",

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T1 - Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

AU - Fukuoka, O.

AU - Matsunami, N.

AU - Tazawa, M.

AU - Shimura, T.

AU - Sataka, M.

AU - Sugai, Hiroyuki

AU - Okayasu, S.

PY - 2006/9/1

Y1 - 2006/9/1

N2 - Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO2 glass at 400 °C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification.

AB - Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO2 glass at 400 °C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification.

KW - Al-doped ZnO

KW - Conductivity

KW - Ion irradiation

KW - Optical property

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2 SPEC. ISS.

ER -

Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

Abstract

Keywords

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