Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

O. Fukuoka, N. Matsunami, M. Tazawa, T. Shimura, M. Sataka, Hiroyuki Sugai, S. Okayasu

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO2 glass at 400 °C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification.

Original languageEnglish
Pages (from-to)295-299
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume250
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Sep 1

Keywords

  • Al-doped ZnO
  • Conductivity
  • Ion irradiation
  • Optical property

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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