Irradiation Effects on Induced Electron Conductivity in an un-doped GaAs/AlGaAs Quantum Well Hall Bar

T. Fujita, R. Hayashi, M. Kohda, J. Ritzmann, A. Ludwig, J. Nitta, A. D. Wieck, A. Oiwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We measure conductivity and light response of a top gated electric field-induced 2DEG carrier in a GaAs based quantum-well heterostructure to confirm their stability as a consequence of removing the Si doping layer. Etched sidewall contacting techniques and surface treatment studies allowed carrier induction in a quantum-dot-fabrication compatible device structure. We performed quantum Hall measurements to evaluate the conduction stability and observed temporal decays of the induced carriers and illumination at several conditions that could still be redeemed by choosing proper fabrication techniques and operation voltage conditions. Mesoscopic research on such un-doped devices have possibility of efficiently interfacing single photons and single electron spins whereas that of holes.

Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100807
DOIs
Publication statusPublished - 2019 May
Event2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
Duration: 2019 May 192019 May 23

Publication series

Name2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference2019 Compound Semiconductor Week, CSW 2019
Country/TerritoryJapan
CityNara
Period19/5/1919/5/23

Keywords

  • gate induced carrier
  • optical response
  • quantum well

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics

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