Irradiation creep of high purity CVD silicon carbide as estimated by the bend stress relaxation method

Y. Katoh, L. L. Snead, T. Hinoki, S. Kondo, A. Kohyama

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The bend stress relaxation technique was applied for an irradiation creep study of high purity, chemically vapor-deposited beta-phase silicon carbide (CVD SiC) ceramic. A constant bend strain was applied to thin strip samples during neutron irradiation to fluences 0.2-4.2 dpa at various temperatures in the range ∼400 to ∼1080 °C. Irradiation creep strain at <0.7 dpa exhibited only a weak dependence on irradiation temperature. However, the creep strain dependence on fluence was non-linear due to the early domination of the initial transient creep, and a transition in creep behavior was found between ∼950 and ∼1080 °C. Steady-state irradiation creep compliances of polycrystalline CVD SiC at doses >0.7 dpa were estimated to be 2.7(±2.6) × 10-7 and 1.5(±0.8) × 10-6 (MPa dpa)-1 at ∼600 to ∼950 °C and ∼1080 °C, respectively, whereas linear-averaged creep compliances of 1-2 × 10-6 (MPa dpa)-1 were obtained for doses of 0.6-0.7 dpa at all temperatures. Monocrystalline 3C SiC samples exhibited significantly smaller transient creep strain and greater subsequent deformation when loaded along 〈0 1 1〉 direction.

Original languageEnglish
Pages (from-to)758-763
Number of pages6
JournalJournal of Nuclear Materials
Volume367-370 A
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2007 Aug 1
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

Fingerprint Dive into the research topics of 'Irradiation creep of high purity CVD silicon carbide as estimated by the bend stress relaxation method'. Together they form a unique fingerprint.

  • Cite this