Iron loss characteristics of electrical steel sheet under inverter excitation by using power semiconductor with extremely low on-voltage property

Shunya Odawara, Daisuke Kayamori, Keisuke Fujisaki

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

In this study, it is demonstrated that the iron loss from the SiC-MOSFET, which is a new power semiconductor with an extremely low on-voltage for electric machine drives is almost the same as that from Si-IGBT, which is a conventional power semiconductor. In order to evaluate the iron loss characteristics when a SiC device is used, two single-phase PWM inverters are built and used for the excitation of a ring made of electrical steel sheets. One of the inverter employs a SiC-MOSFET, and the other inverter employs a Si-IGBT. Then, the iron losses for the two inverters are compared.

Original languageEnglish
Pages (from-to)649-655+1
JournalIEEJ Transactions on Industry Applications
Volume134
Issue number7
DOIs
Publication statusPublished - 2014

Keywords

  • Iron loss
  • On-voltage
  • Power semiconductor
  • Si-IGBT
  • SiC-MOSFET
  • Single phase PWM inverter

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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