Iron loss characteristics of electrical steel sheet under inverter excitation by using power semiconductor with extremely low on-voltage property

Shunya Odawara; Daisuke Kayamori; Keisuke Fujisaki

doi:10.1541/ieejias.134.649

Iron loss characteristics of electrical steel sheet under inverter excitation by using power semiconductor with extremely low on-voltage property

Shunya Odawara, Daisuke Kayamori, Keisuke Fujisaki

Environmental Studies

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In this study, it is demonstrated that the iron loss from the SiC-MOSFET, which is a new power semiconductor with an extremely low on-voltage for electric machine drives is almost the same as that from Si-IGBT, which is a conventional power semiconductor. In order to evaluate the iron loss characteristics when a SiC device is used, two single-phase PWM inverters are built and used for the excitation of a ring made of electrical steel sheets. One of the inverter employs a SiC-MOSFET, and the other inverter employs a Si-IGBT. Then, the iron losses for the two inverters are compared.

Original language	English
Pages (from-to)	649-655+1
Journal	IEEJ Transactions on Industry Applications
Volume	134
Issue number	7
DOIs	https://doi.org/10.1541/ieejias.134.649
Publication status	Published - 2014

Keywords

Iron loss
On-voltage
Power semiconductor
Si-IGBT
SiC-MOSFET
Single phase PWM inverter

ASJC Scopus subject areas

Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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abstract = "In this study, it is demonstrated that the iron loss from the SiC-MOSFET, which is a new power semiconductor with an extremely low on-voltage for electric machine drives is almost the same as that from Si-IGBT, which is a conventional power semiconductor. In order to evaluate the iron loss characteristics when a SiC device is used, two single-phase PWM inverters are built and used for the excitation of a ring made of electrical steel sheets. One of the inverter employs a SiC-MOSFET, and the other inverter employs a Si-IGBT. Then, the iron losses for the two inverters are compared.",

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AU - Odawara, Shunya

AU - Kayamori, Daisuke

AU - Fujisaki, Keisuke

PY - 2014

Y1 - 2014

N2 - In this study, it is demonstrated that the iron loss from the SiC-MOSFET, which is a new power semiconductor with an extremely low on-voltage for electric machine drives is almost the same as that from Si-IGBT, which is a conventional power semiconductor. In order to evaluate the iron loss characteristics when a SiC device is used, two single-phase PWM inverters are built and used for the excitation of a ring made of electrical steel sheets. One of the inverter employs a SiC-MOSFET, and the other inverter employs a Si-IGBT. Then, the iron losses for the two inverters are compared.

AB - In this study, it is demonstrated that the iron loss from the SiC-MOSFET, which is a new power semiconductor with an extremely low on-voltage for electric machine drives is almost the same as that from Si-IGBT, which is a conventional power semiconductor. In order to evaluate the iron loss characteristics when a SiC device is used, two single-phase PWM inverters are built and used for the excitation of a ring made of electrical steel sheets. One of the inverter employs a SiC-MOSFET, and the other inverter employs a Si-IGBT. Then, the iron losses for the two inverters are compared.

KW - Iron loss

KW - On-voltage

KW - Power semiconductor

KW - Si-IGBT

KW - SiC-MOSFET

KW - Single phase PWM inverter

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Iron loss characteristics of electrical steel sheet under inverter excitation by using power semiconductor with extremely low on-voltage property

Abstract

Keywords

ASJC Scopus subject areas

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