Iron-doped indium saving indium-tin oxide (ITO) thin films sputtered on preheated substrates

M. Ohtsuka, R. Sergiienko, S. Petrovska, B. Ilkiv, T. Nakamura

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Iron-doped indium tin oxide (ITO) thin films with reduced to 50 mass% indium oxide content were prepared by co-sputtering of ITO and Fe2O3 targets in mixed argon-oxygen atmosphere onto glass substrates preheated at 523 K. The influence of working gas flow rate and heat treatment temperature on the electrical, optical, structural, and morphological properties of the films was characterized by means of four point probe, Ultraviolet-Visible (UV–Vis) spectroscopy, X-ray diffraction and atomic force microscopy methods. Doping of ITO films by iron using Fe2O3 target resulted in increasing transmittance of films. Iron-doping hindered the crystallization of the ITO thin films. It has been found from the electrical measurements that films sputtered under optimum conditions showed values of volume resistivity 992 μΩcm. It has been shown that iron-doped indium tin oxide films have smooth surface in contrast to conventional ITO.

Original languageEnglish
Pages (from-to)19-28
Number of pages10
JournalOptik
Volume179
DOIs
Publication statusPublished - 2019 Feb
Externally publishedYes

Keywords

  • Direct current sputtering
  • Electrical properties
  • Iron-doped indium tin oxide
  • Optical properties
  • Radio frequency sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Iron-doped indium saving indium-tin oxide (ITO) thin films sputtered on preheated substrates'. Together they form a unique fingerprint.

Cite this