IR study of fundamental chemical reactions in atomic layer deposition of HfO                         2                          with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor

F. Hirose; Y. Kinoshita; K. Kanomata; K. Momiyama; S. Kubota; K. Hirahara; Y. Kimura; M. Niwano

doi:10.1016/j.apsusc.2012.04.130

IR study of fundamental chemical reactions in atomic layer deposition of HfO ₂ with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor

F. Hirose, Y. Kinoshita, K. Kanomata, K. Momiyama, S. Kubota, K. Hirahara, Y. Kimura, M. Niwano

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The fundamental reactions in HfO ₂ atomic layer deposition (ALD) with the precursors tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor on Si (1 0 0) surfaces at room temperature (RT) were studied by infrared absorption spectroscopy (IRAS) with a multiple internal reflection geometry. The IRAS results indicated that TEMAH can be adsorbed at OH sites on Si surfaces at RT. Ozone irradiation on the TEMAH-adsorbed Si surface at RT effectively removes hydroaminocarbon adsorbates introduced in the course of TEMAH adsorption, although this treatment provides no OH-group adsorption sites for TEMAH on the Si surface at RT. For further adsorption, water-vapor treatment at around 160°C is effective in restoring the adsorption sites. The IR study suggests that the cyclic process of TEMAH adsorption and ozone treatment at RT followed by OH restoration with water vapor at a temperature of 160°C allows continuous HfO ₂ deposition.

Original language	English
Pages (from-to)	7726-7731
Number of pages	6
Journal	Applied Surface Science
Volume	258
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2012.04.130
Publication status	Published - 2012 Jul 15
Externally published	Yes

Keywords

Atomic layer deposition
HfO2
IR absorption spectroscopy

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2012.04.130

Cite this

Hirose, F., Kinoshita, Y., Kanomata, K., Momiyama, K., Kubota, S., Hirahara, K., Kimura, Y., & Niwano, M. (2012). IR study of fundamental chemical reactions in atomic layer deposition of HfO ₂ with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor Applied Surface Science, 258(19), 7726-7731. https://doi.org/10.1016/j.apsusc.2012.04.130

IR study of fundamental chemical reactions in atomic layer deposition of HfO ₂ with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor . / Hirose, F.; Kinoshita, Y.; Kanomata, K. et al.

In: Applied Surface Science, Vol. 258, No. 19, 15.07.2012, p. 7726-7731.

Research output: Contribution to journal › Article › peer-review

Hirose, F, Kinoshita, Y, Kanomata, K, Momiyama, K, Kubota, S, Hirahara, K, Kimura, Y & Niwano, M 2012, ' IR study of fundamental chemical reactions in atomic layer deposition of HfO ₂ with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor ', Applied Surface Science, vol. 258, no. 19, pp. 7726-7731. https://doi.org/10.1016/j.apsusc.2012.04.130

Hirose F, Kinoshita Y, Kanomata K, Momiyama K, Kubota S, Hirahara K et al. IR study of fundamental chemical reactions in atomic layer deposition of HfO ₂ with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor Applied Surface Science. 2012 Jul 15;258(19):7726-7731. doi: 10.1016/j.apsusc.2012.04.130

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abstract = " The fundamental reactions in HfO 2 atomic layer deposition (ALD) with the precursors tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor on Si (1 0 0) surfaces at room temperature (RT) were studied by infrared absorption spectroscopy (IRAS) with a multiple internal reflection geometry. The IRAS results indicated that TEMAH can be adsorbed at OH sites on Si surfaces at RT. Ozone irradiation on the TEMAH-adsorbed Si surface at RT effectively removes hydroaminocarbon adsorbates introduced in the course of TEMAH adsorption, although this treatment provides no OH-group adsorption sites for TEMAH on the Si surface at RT. For further adsorption, water-vapor treatment at around 160°C is effective in restoring the adsorption sites. The IR study suggests that the cyclic process of TEMAH adsorption and ozone treatment at RT followed by OH restoration with water vapor at a temperature of 160°C allows continuous HfO 2 deposition.",

keywords = "Atomic layer deposition, HfO2, IR absorption spectroscopy",

author = "F. Hirose and Y. Kinoshita and K. Kanomata and K. Momiyama and S. Kubota and K. Hirahara and Y. Kimura and M. Niwano",

note = "Funding Information: This work was partly supported by a grant-in-aid for Scientific Research(c) ( 21510111 ).",

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AU - Kubota, S.

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AU - Kimura, Y.

AU - Niwano, M.

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AB - The fundamental reactions in HfO 2 atomic layer deposition (ALD) with the precursors tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor on Si (1 0 0) surfaces at room temperature (RT) were studied by infrared absorption spectroscopy (IRAS) with a multiple internal reflection geometry. The IRAS results indicated that TEMAH can be adsorbed at OH sites on Si surfaces at RT. Ozone irradiation on the TEMAH-adsorbed Si surface at RT effectively removes hydroaminocarbon adsorbates introduced in the course of TEMAH adsorption, although this treatment provides no OH-group adsorption sites for TEMAH on the Si surface at RT. For further adsorption, water-vapor treatment at around 160°C is effective in restoring the adsorption sites. The IR study suggests that the cyclic process of TEMAH adsorption and ozone treatment at RT followed by OH restoration with water vapor at a temperature of 160°C allows continuous HfO 2 deposition.

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