TY - JOUR
T1 - IR study of fundamental chemical reactions in atomic layer deposition of HfO 2 with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor
AU - Hirose, F.
AU - Kinoshita, Y.
AU - Kanomata, K.
AU - Momiyama, K.
AU - Kubota, S.
AU - Hirahara, K.
AU - Kimura, Y.
AU - Niwano, M.
N1 - Funding Information:
This work was partly supported by a grant-in-aid for Scientific Research(c) ( 21510111 ).
PY - 2012/7/15
Y1 - 2012/7/15
N2 - The fundamental reactions in HfO 2 atomic layer deposition (ALD) with the precursors tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor on Si (1 0 0) surfaces at room temperature (RT) were studied by infrared absorption spectroscopy (IRAS) with a multiple internal reflection geometry. The IRAS results indicated that TEMAH can be adsorbed at OH sites on Si surfaces at RT. Ozone irradiation on the TEMAH-adsorbed Si surface at RT effectively removes hydroaminocarbon adsorbates introduced in the course of TEMAH adsorption, although this treatment provides no OH-group adsorption sites for TEMAH on the Si surface at RT. For further adsorption, water-vapor treatment at around 160°C is effective in restoring the adsorption sites. The IR study suggests that the cyclic process of TEMAH adsorption and ozone treatment at RT followed by OH restoration with water vapor at a temperature of 160°C allows continuous HfO 2 deposition.
AB - The fundamental reactions in HfO 2 atomic layer deposition (ALD) with the precursors tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor on Si (1 0 0) surfaces at room temperature (RT) were studied by infrared absorption spectroscopy (IRAS) with a multiple internal reflection geometry. The IRAS results indicated that TEMAH can be adsorbed at OH sites on Si surfaces at RT. Ozone irradiation on the TEMAH-adsorbed Si surface at RT effectively removes hydroaminocarbon adsorbates introduced in the course of TEMAH adsorption, although this treatment provides no OH-group adsorption sites for TEMAH on the Si surface at RT. For further adsorption, water-vapor treatment at around 160°C is effective in restoring the adsorption sites. The IR study suggests that the cyclic process of TEMAH adsorption and ozone treatment at RT followed by OH restoration with water vapor at a temperature of 160°C allows continuous HfO 2 deposition.
KW - Atomic layer deposition
KW - HfO2
KW - IR absorption spectroscopy
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U2 - 10.1016/j.apsusc.2012.04.130
DO - 10.1016/j.apsusc.2012.04.130
M3 - Article
AN - SCOPUS:84861345571
VL - 258
SP - 7726
EP - 7731
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 19
ER -