IR study of fundamental chemical reactions in atomic layer deposition of HfO 2 with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor

F. Hirose, Y. Kinoshita, K. Kanomata, K. Momiyama, S. Kubota, K. Hirahara, Y. Kimura, M. Niwano

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The fundamental reactions in HfO 2 atomic layer deposition (ALD) with the precursors tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor on Si (1 0 0) surfaces at room temperature (RT) were studied by infrared absorption spectroscopy (IRAS) with a multiple internal reflection geometry. The IRAS results indicated that TEMAH can be adsorbed at OH sites on Si surfaces at RT. Ozone irradiation on the TEMAH-adsorbed Si surface at RT effectively removes hydroaminocarbon adsorbates introduced in the course of TEMAH adsorption, although this treatment provides no OH-group adsorption sites for TEMAH on the Si surface at RT. For further adsorption, water-vapor treatment at around 160°C is effective in restoring the adsorption sites. The IR study suggests that the cyclic process of TEMAH adsorption and ozone treatment at RT followed by OH restoration with water vapor at a temperature of 160°C allows continuous HfO 2 deposition.

Original languageEnglish
Pages (from-to)7726-7731
Number of pages6
JournalApplied Surface Science
Volume258
Issue number19
DOIs
Publication statusPublished - 2012 Jul 15

Keywords

  • Atomic layer deposition
  • HfO2
  • IR absorption spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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