IQE and EQE of the nitride-based UV/DUV LEDs

H. Amano, G. J. Park, Tomoyuki Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2011
Publication statusPublished - 2011 Dec 1
Externally publishedYes
EventQuantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States
Duration: 2011 May 12011 May 6

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2011
CountryUnited States
CityBaltimore, MD
Period11/5/111/5/6

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Amano, H., Park, G. J., Tanikawa, T., Honda, Y., Yamaguchi, M., Ban, K., Nagata, K., Nonaka, K., Takeda, K., Iwaya, M., Takeuchi, T., Kamiyama, S., & Akasaki, I. (2011). IQE and EQE of the nitride-based UV/DUV LEDs. In Quantum Electronics and Laser Science Conference, QELS 2011 (Optics InfoBase Conference Papers).