The interdiffusion coefficients of Ga and Al were measured for GaAs-AlAs superlattices ion-implanted with Be, B, F, Si, Ar and As. The degree of interdiffusion enhancement was in the order Si > F > As > B and no interdiffusion enhance¬ment effects were observed for Be and Ar. Except for Be, impurities with large diffusion coefficients have a tendency to enhance the impurity-induced compositional disordering.
ASJC Scopus subject areas
- Physics and Astronomy(all)