Ion-selective light-addressable potentiometric sensor (LAPS) with chalcogenide thin film prepared by pulsed laser deposition

Y. Mourzina, T. Yoshinobu, J. Schubert, H. Lüth, H. Iwasaki, M. J. Schöning

Research output: Contribution to journalArticlepeer-review

63 Citations (Scopus)

Abstract

Pb-Ag-As-I-S chalcogenide glass was deposited on the surface of a light-addressable potentiometric sensor (LAPS) by means of the pulsed laser beam deposition (PLD) technique. The deposited layer worked as a Pb2+-ion-sensitive transducer, and the sensor showed Nernstian response with a sensitivity of 29±1mV/decade. The detection limit of the sensor for Pb2+-ions was 1×10-6mol/l. The response time does not exceed 50s for Pb2+-ion concentrations higher than 1×10-3mol/l, while for lower concentration range the response time increases up to 3-5 min.

Original languageEnglish
Pages (from-to)136-140
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume80
Issue number2
DOIs
Publication statusPublished - 2001 Nov 20
Externally publishedYes

Keywords

  • Chalcogenide glass
  • Chemical sensor
  • Lead sensitivity
  • Light-addressable potentiometric sensor (LAPS)
  • Pulsed laser deposition (PLD)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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