Ion irradiation effect on diluted magnetic semiconductor fine particles incorporated into Langmuir-Blodgett films

T. Yamaki; T. Yamada; K. Asai; K. Ishigure; H. Shibata

doi:10.1016/S0040-6090(98)00717-2

Ion irradiation effect on diluted magnetic semiconductor fine particles incorporated into Langmuir-Blodgett films

T. Yamaki, T. Yamada, K. Asai, K. Ishigure, H. Shibata

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We successfully prepared fine particles of the diluted magnetic semiconductor (DMS), Cd_1•xMn_xS (x · 0.20), in Langmuir-Blodgett (LB) films, and then examined the ion irradiation effect on their surface electronic states. From in-situ observation of the emission induced by 1.0 MeV H^• bombardment, the ion irradiation was found to decrease the intensity of the lower-energy emission via deeper defect states under the condition that the intrinsic Mn^2• state remained. This clearly shows that ion irradiation will provide good surface passivation to Cd_1•xMn_xS fine particles as determined in our previous study of CdS fine particles. These surface-treatment effects of ion irradiation appeared to be prominent in the nanoparticles whose surface-to-volume ratio is much larger than that of the bulk crystals.

Original language	English
Pages (from-to)	581-585
Number of pages	5
Journal	Thin Solid Films
Volume	327-329
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)00717-2
Publication status	Published - 1998 Jan 1
Externally published	Yes

Keywords

Diluted magnetic semiconductor
Fine particle
Ion irradiation
Langmuir-Blodgett films
Luminescence

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(98)00717-2

Cite this

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title = "Ion irradiation effect on diluted magnetic semiconductor fine particles incorporated into Langmuir-Blodgett films",

abstract = "We successfully prepared fine particles of the diluted magnetic semiconductor (DMS), Cd1•xMnxS (x · 0.20), in Langmuir-Blodgett (LB) films, and then examined the ion irradiation effect on their surface electronic states. From in-situ observation of the emission induced by 1.0 MeV H• bombardment, the ion irradiation was found to decrease the intensity of the lower-energy emission via deeper defect states under the condition that the intrinsic Mn2• state remained. This clearly shows that ion irradiation will provide good surface passivation to Cd1•xMnxS fine particles as determined in our previous study of CdS fine particles. These surface-treatment effects of ion irradiation appeared to be prominent in the nanoparticles whose surface-to-volume ratio is much larger than that of the bulk crystals.",

keywords = "Diluted magnetic semiconductor, Fine particle, Ion irradiation, Langmuir-Blodgett films, Luminescence",

author = "T. Yamaki and T. Yamada and K. Asai and K. Ishigure and H. Shibata",

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doi = "10.1016/S0040-6090(98)00717-2",

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TY - JOUR

T1 - Ion irradiation effect on diluted magnetic semiconductor fine particles incorporated into Langmuir-Blodgett films

AU - Yamaki, T.

AU - Yamada, T.

AU - Asai, K.

AU - Ishigure, K.

AU - Shibata, H.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - We successfully prepared fine particles of the diluted magnetic semiconductor (DMS), Cd1•xMnxS (x · 0.20), in Langmuir-Blodgett (LB) films, and then examined the ion irradiation effect on their surface electronic states. From in-situ observation of the emission induced by 1.0 MeV H• bombardment, the ion irradiation was found to decrease the intensity of the lower-energy emission via deeper defect states under the condition that the intrinsic Mn2• state remained. This clearly shows that ion irradiation will provide good surface passivation to Cd1•xMnxS fine particles as determined in our previous study of CdS fine particles. These surface-treatment effects of ion irradiation appeared to be prominent in the nanoparticles whose surface-to-volume ratio is much larger than that of the bulk crystals.

AB - We successfully prepared fine particles of the diluted magnetic semiconductor (DMS), Cd1•xMnxS (x · 0.20), in Langmuir-Blodgett (LB) films, and then examined the ion irradiation effect on their surface electronic states. From in-situ observation of the emission induced by 1.0 MeV H• bombardment, the ion irradiation was found to decrease the intensity of the lower-energy emission via deeper defect states under the condition that the intrinsic Mn2• state remained. This clearly shows that ion irradiation will provide good surface passivation to Cd1•xMnxS fine particles as determined in our previous study of CdS fine particles. These surface-treatment effects of ion irradiation appeared to be prominent in the nanoparticles whose surface-to-volume ratio is much larger than that of the bulk crystals.

KW - Diluted magnetic semiconductor

KW - Fine particle

KW - Ion irradiation

KW - Langmuir-Blodgett films

KW - Luminescence

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VL - 327-329

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Ion irradiation effect on diluted magnetic semiconductor fine particles incorporated into Langmuir-Blodgett films

Abstract

Keywords

ASJC Scopus subject areas

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