Ion irradiation effect on diluted magnetic semiconductor fine particles incorporated into Langmuir-Blodgett films

T. Yamaki, T. Yamada, K. Asai, K. Ishigure, H. Shibata

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We successfully prepared fine particles of the diluted magnetic semiconductor (DMS), Cd1•xMnxS (x · 0.20), in Langmuir-Blodgett (LB) films, and then examined the ion irradiation effect on their surface electronic states. From in-situ observation of the emission induced by 1.0 MeV H bombardment, the ion irradiation was found to decrease the intensity of the lower-energy emission via deeper defect states under the condition that the intrinsic Mn2• state remained. This clearly shows that ion irradiation will provide good surface passivation to Cd1•xMnxS fine particles as determined in our previous study of CdS fine particles. These surface-treatment effects of ion irradiation appeared to be prominent in the nanoparticles whose surface-to-volume ratio is much larger than that of the bulk crystals.

Original languageEnglish
Pages (from-to)581-585
Number of pages5
JournalThin Solid Films
Volume327-329
Issue number1-2
DOIs
Publication statusPublished - 1998 Jan 1
Externally publishedYes

Keywords

  • Diluted magnetic semiconductor
  • Fine particle
  • Ion irradiation
  • Langmuir-Blodgett films
  • Luminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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