Ion-induced release of H and D implanted in Be, C, Si and SiC

S. Nagata, S. Yamaguchi, H. Bergsåker, B. Emmoth

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10 Citations (Scopus)


Retention and ion-induced release of H and D implanted into Be, C, Si and SiC at the energy of 5-8 keV have been investigated at room temperature by elastic recoil detection analysis. Ion-induced release is induced both by low energy (5-20 keV) and high energy (2000 keV) 4He ions. For retention and isotopic replacement of H and D, the observed depth profiles show similar features as predicted by the Local Mixing Model. It is shown that the release behavior during 4He+ irradiation at low energies is different from that for hydrogen bombardment. The release rate observed in C and SiC is much smaller than that in Be and Si. The release cross sections for high energy (2000 keV) 4He+ bombardment are an order of magnitude larger than those for low energy bombardment (5-20 keV).

Original languageEnglish
Pages (from-to)739-743
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Issue number1-4
Publication statusPublished - 1988 Jun 2

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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