We have clarified the effect of ion flux in low temperature silicon epitaxy by low-energy ion bombardment. First, it is found that the impurity activation rate of the deposited film is reduced when the energy deposition to a growing film surface is performed under very large ion flux density. However, in order to enhance the carrier mobility, ion bombardment with large enough ion energy is needed. The precise control of the ion flux density as well as the ion bombardment energy is quite essential to growing high quality films. In addition, enhancement in the surface adatom migration by low-energy ion bombardment has been also experimentally verified.
|Number of pages||3|
|Publication status||Published - 1991 Jan 1|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 1991 Aug 27 → 1991 Aug 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91/8/27 → 91/8/29|
ASJC Scopus subject areas