Ion flux effect in low temperature silicon epitaxy by low-energy ion bombardment

Tohru Yoshie, Masaki Hirayama, Tadahiro Ohmi

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

We have clarified the effect of ion flux in low temperature silicon epitaxy by low-energy ion bombardment. First, it is found that the impurity activation rate of the deposited film is reduced when the energy deposition to a growing film surface is performed under very large ion flux density. However, in order to enhance the carrier mobility, ion bombardment with large enough ion energy is needed. The precise control of the ion flux density as well as the ion bombardment energy is quite essential to growing high quality films. In addition, enhancement in the surface adatom migration by low-energy ion bombardment has been also experimentally verified.

Original languageEnglish
Pages41-43
Number of pages3
Publication statusPublished - 1991 Jan 1
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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